Transistors
DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA
Digital transistors (built in resistor)
DTA124TH / DTA124TE / DT124TUA / DTA124TKA / DTA124TSA
!Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. !External dimensions (Units : mm)
DTA124TH
0.27
1.6 0.85
(1)
0.5 0.5
(3)
(2)
0.12
0to0.1
0.7
1.0
1.6
ROHM : EMT3H
(1) Emitter (2) Base (3) Collector
Addreviated symbol : 95
DTA124TE
0.3
(3)
(1) (2)
0.2 0.50.5
1.0
0.8 1.6
0.15
0.2
0.55
0.1Min.
0to0.1
!Equivalent circuit
ROHM : EMT3
0.7
1.6
Addreviated symbol : 95
(1) Emitter (2) Base (3) Collector
C B R1 E
DTA124TUA
(1)
0.3
(3)
1.25 2.1
0.15
0.2
(2)
B : Base C : Collector E : Emitter
ROHM : UMT3 EIAJ : SC-70
0.1to0.4
0to0.1
0.7
0.9
1.3
2.0
All terminals have same dimensions
0.65 0.65
(1) Emitter (2) Base (3) Collector
Addreviated symbol : 95
DTA124TKA
(1)
All terminals have same dimensions
0.4
(3) (2)
1.6 2.8
0.15
0.8
1.1
0.95 0.95 1.9 2.9
ROHM : SMT3 EIAJ : SC-59
0.3to0.6
(1) Emitter (2) Base (3) Collector
Addreviated symbol : 95
DTA124TSA
3
4
0to0.1
2
(15Min.)
3Min.
0.45 2.5 5 0.5 0.45
ROHM : SPT EIAJ : SC-72
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol H VCBO VCEO VEBO IC PC Tj Tstg 150
DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA
Limits(DTA124T ) E UA −50 −50 −5 −100 200 150 −55~+150 300 KA SA V V V mA mW ˚C ˚C Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
!Electrical characteristics (Ta=25°C)
Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. −50 −50 −5 100 15.4 Typ. 250 22 250 Max. −0.5 −0.5 −0.3 600 28.6 Unit V V V µA µA V kΩ MHz IC=−50µA IC=−1mA IE=−50µA VCB=−50V VEB=−4V IC/IB=−5mA/−0.5mA VCE=−5V, IC=−1mA VCE=−10V, IE=5mA, f=100MHz ∗ Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
∗ Transition frequency of the device
!Packaging specifications
Package Package type Code Basic ordering unit (pieces)
EMT3H
EMT3
UMT3
SMT3
SPT
Taping
T2L 8000
Taping
TL 3000 -
Taping
T106 3000 -
Taping
T146 3000 -
Taping
TP 5000 -
Part No. DTA124TH DTA124TE DTA124TUA DTA124TKA DTA124TSA
-
-
-
!Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1k 500 VCE=−5V
-1 -500m -200m -100m -50m -20m -10m -5m -2m
Ta=100˚C 25˚C −40˚C
IC/IB=10
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m Ta=100˚C 25˚C −40˚C
-1m -10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m COLLECTOR CURRENT : IC (A)
COLLECTOR URRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
