(DRDxxxxW) COMPLEX ARRAY FOR RELAY DRIVERS

SPICE MODELS: DRDPB26W DRDN005W DRDN010W DRDNB16W DRDNB26W DRDP006W DRDPB16W DRD (xxxx) W Lead-free Green COMPLEX ARRAY FOR RELAY DRIVERS Features NEW PRODUCT • • • • • • • • • • • • Epitaxial Planar Die Construction One Transistor and One Switching Diode in One Package Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) BC A SOT-363 Dim A B C D F H M Min 0.10 1.15 2.00 0.30 1.80  0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° Mechanical Data Case: SOT-363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.008 grams (approx.) J D K G H 0.65 Nominal J K L M α L All Dimensions in mm P/N DRDNB16W DRDPB16W DRDNB26W DRDPB26W R1 (NOM) R2 (NOM) 1K 1K 220 220 10K 10K 4.7K 4.7K DRDN010W/ DRDN005W DRDP006W R2 R1 R1 R2 DRDNB16W/ DRDNB26W DRDPB16W/ DRDPB26W Maximum Ratings, Total Device Characteristic Power Dissipation (Note 3) @ TA = 25°C unless otherwise specified Symbol Pd RθJA Tj, TSTG Value 200 625 -55 to +150 Unit mW °C/W °C Thermal Resistance, Junction to Ambient Air (Note 3) Operating and Storage and Temperature Range Maximum Ratings, DRDN010W NPN Transistor Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3) @ TA = 25°C unless otherwise specified Value 45 18 5 1000 @ TA = 25°C unless otherwise specified Value 80 80 4.0 500 Unit V V V mA Unit V V V mA Symbol VCBO VCEO VEBO IC Maximum Ratings, DRDN005W NPN Transistor Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3) Notes: Symbol VCBO VCEO VEBO IC 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http: //www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30573 Rev. 8 - 2 1 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Maximum Ratings, DRDP006W PNP Transistor @ TA = 25°C unless otherwise specified Value -60 -60 -5.0 -600 Unit V V V mA NEW PRODUCT Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 3) Symbol VCBO VCEO VEBO IC Maximum Ratings, DRDNB16W Pre-Biased NPN Transistor Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC @ TA = 25°C unless otherwise specified Value 50 -5 to +10 600 Unit V V mA Maximum Ratings, DRDNB26W Pre-Biased NPN Transistor Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC @ TA = 25°C unless otherwise specified Value 50 -5 to +5 600 Unit V V mA Maximum Ratings, DRDPB16W Pre-Biased PNP Transistor Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC @ TA = 25°C unless otherwise specified Value -50 +5 to -10 600 Unit V V mA Maximum Ratings, DRDPB26W Pre-Biased PNP Transistor Characteristic Supply Voltage Input Voltage Output Current Symbol VCC VIN IC @ TA = 25°C unless otherwise specified Value -50 +5 to -5 -600 Unit V V mA Maximum Ratings, Switching Diode Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 3) Average Rectified Output Current (Note 3) @ TA = 25°C unless otherwise specified Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM Value 100 75 53 500 250 4.0 2.0 Unit V V V mA mA A Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s DS30573 Rev. 8 - 2 2 of 9 www.diodes.com DRD (xxxx) W Electrical Characteristics, DRDN010W NPN Transistor @ TA = 25°C unless otherwise specified Unit  V V V V µA µA MHz pF Test Condition IC = 100mA, VCE = 1V IC = 300mA, IB = 30mA IC = 100µA, IE = 0 IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 50mA, f = 100MHz VCB = 10V, IE = 0, f = 1MHz NEW PRODUCT Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Current Gain-Bandwidth Product Capacitance Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO fT Cobo Min 150  45 18 5   100  Max 800 0.5    1 1  8 Electrical Characteristics, DRDN005W NPN Transistor Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES hFE VCE(SAT) VBE(SAT) fT Min 80 80 4.0   100   100 @ TA = 25°C unless otherwise specified Max    100 100  0.25 1.2  Unit V V V nA nA  V V MHz Test Condition IC = 100µA, IE = 0 IC = 1.0mA, IB = 0 IE = 100µA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz Electrical Characteristics, DRDP006W PNP Transistor Characteristic DC Current Gain Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Current Gain-Bandwidth Product Capacitance Symbol hFE VCE(SAT) V(BR)CBO V(BR)CEO V(BR)EBO ICBO fT Cobo Min 100  -60 -60 -5  200  @ TA = 25°C unless otherwise specified Max 300 -0.4    -10  8 Unit  V V V V nA MHz pF Test Condition IC = -150mA, VCE = -10V IC = -150mA, IB = -15mA IC = -10µA, IE = 0 IC = -10mA, IB = 0 IE = -10µA, IC = 0 VCB = -50V, IE = 0 VCE = -20V, IC = -50mA, f = 100MHz VCB = -10V, IE = 0, f = 1MHz @ TA = 25°C unless otherwise specified Test Condition VCC = 5V, IO = 100µA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 50mA VCE = 10V, IE = 5mA, f = 100MHz Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min 0.3     56  Typ       200 Max  2.0 0.3V 7.2 0.5   Unit V V V mA µA  MHz DS30573 Rev. 8 - 2 3 of 9 www.diodes.com DRD (xxxx) W Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @ TA = 25°C unless otherwise specified Test Condition NEW PRODUCT Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min 0.5     47  Typ       200 Max  3.0 0.3V 28 0.5   Unit V V V mA µA  MHz VCC = 5V, IO = 100µA VO = 0.3V, IO = 20mA IO/Il = 50mA/2.5mA VI = 5V VCC = 50V, VI = 0V VO = 5V, IO = 50mA VCE = 10V, IE = 5mA, f = 100MHz @ TA = 25°C unless otherwise specified Test Condition VCC = -5V, IO = -100µA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -50mA VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min -0.3     56  Typ       200 Max  -2.0 -0.3V -7.2 -0.5   Unit V V V mA µA  MHz Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor Characteristic Input Voltage Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product Symbol Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Min -0.5     47  Typ       200 Max  -3.0 -0.3V -28 -0.5   Unit V V V mA µA  MHz @ TA = 25°C unless otherwise specified Test Condition VCC = -5V, IO = -100µA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -50mA VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, Switching Diode Characteristic Reverse Breakdown Voltage (Note 4) Forward Voltage (Note 4) @ TA = 25°C unless otherwise specified Min 75 0.62       Max  0.72 0.855 1.0 1.25 2.5 50 30 25 4.0 4.0 Unit  V µA µA µA nA pF ns Test Condition IR = 10µA IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V VR = 0, f = 1.0MHz IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Symbol V(BR)R VF Reverse Current (Note 4) Total Capacitance Reverse Recovery Time Notes: 4. Short duration pulse test used to minimize self-heating effect. IR CT trr DS30573 Rev. 8 - 2 4 of 9 www.diodes.com DRD (xxxx) W Device Characteristics 250 PD, POWER DISSIPATION (mW) 1000 NEW PRODUCT 200 hFE, DC CURRENT GAIN 150 100 100 50 VCE = 1.0V 0 0 100 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) 200 1 0.0001 .001 .01 .1 1 10 IC, COLLECTOR CURRENT (A) Fig. 2, Typical DC Current Gain vs Collector Current (DRDN010W) 100 f = 1MHz 1000 COBO, OUTPUT CAPACITANCE (pF) VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 1 10 100 100 10 10 1 0.1 1 0.0001 .001 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3, Output Capacitance vs. Collector-Base Voltage (DRDN010W) .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4, Collector Saturation Voltage vs Collector Current (DRDN010W) 10 DS30573 Rev. 8 - 2