High Performance Fast Recovery Diode

www.DataSheet4U.com DPG 60 C 300QB HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 1 2 3 V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns Part number (Marking on product) DPG 60 C 300QB Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: TO-3P ● Industry standard outline - compatible with TO-247 ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol Definition max. repetitive reverse voltage reverse current Conditions TVJ = 25 °C VR = 300 V min. typ. max. Unit V µA VRRM IR VF 300 1 0.1 1.34 TVJ = 25 °C TVJ = 150 °C TVJ = 25 °C TVJ = 150 °C T C = 135 °C T VJ = 175 °C VR = 300 V forward voltage mA V I F = 30 A I F = 60 A I F = 30 A I F = 60 A 1.69 1.06 1.39 30 0.70 10.5 0.95 V V V A I FAV average forward current threshold voltage slope resistance rectangular, d = 0.5 VF0 rF R thJC for power loss calculation only V mΩ K/W thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current TVJ Ptot I FSM -55 TC t p = 10 ms (50 Hz), sine I F = 30 A; -diF /dt = 200 A/µs VR = 100 V VR = 150 V; f = 1 MHz I AS = 9 A; L = 100 µH VA = 1.5·VR typ.; f = 10 kHz = 25 °C 3 35 40 TVJ = 45 °C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 25 °C 175 160 300 °C W A I RM t rr CJ EAS I AR A A ns ns pF 4 0.9 mJ A reverse recovery time junction capacitance non-repetitive avalanche energy repetitive avalanche current 0614 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved www.DataSheet4U.com DPG 60 C 300QB Ratings Symbol I RMS R thCH MD FC T stg Weight Definition RMS current thermal resistance case to heatsink mounting torque mounting force with clip storage temperature Conditions per pin* min. typ. max. 50 Unit A K/W 0.25 0.8 20 -55 5 1.2 120 150 Nm N °C g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-3P SYM A A1 A2 b b2 b4 c D D1 E E1 e L L1 ØP ØP1 S MIN MAX MIN MAX 0614 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved www.DataSheet4U.com DPG 60 C 300QB 80 A 70 IF 60 50 40 30 20 10 0 0.0 200 25°C 100 0 100 5 0 A/µs 1000 -diF/dt 0 200 400 600 A/µs 1000 800 -diF/dt TVJ = 150°C 125°C 700 µC 600 Qr 500 400 300 10 TVJ = 125°C VR = 200 V IRM IF = 60 A 30 A 15 A 20 15 30 A 25 TVJ = 125°C VR = 200 V IF = 60 A 30 A 15 A 0.4 0.8 1.2 VF 1.6 V Fig. 1 Forward current IF vs. VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 100 ns 90 trr 80 70 400 60 300 TVJ = 125°C VR = 200 V tfr 700 ns 600 500 Fig. 3 Typ. peak reverse current IRM versus -diF/dt tfr TVJ = 125°C VR = 200 V IF = 30 A VFR 20 15 10 5 0 600 800 A/µs 1000 diF/dt 35 V 30 VFR 25 1.4 1.2 Kf 1.0 0.8 0.6 0.4 0.2 0 VR = 200 V IF = 30 A diF/dt = 500 A/µs 50 IRM Qrr 40 80 120 C 160 TVJ 40 200 100 0 0 200 400 600 A/µs 1000 800 -diF/dt 0 200 400 IF = 60 A 30 A 30 15 A 20 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 Fig. 5 Typ. recovery time trr vs. -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi [K/W] ZthJC ti [s] 0.1 0.505 0.195 0.250 0.005 0.0003 0.041 0.01 0.001 0.00001 DPG60C300QB 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal impedance junction to case 0614 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved