High Performance Fast Recovery Diode

www.DataSheet4U.com DPG 60 C 300HB HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode 1 2 3 V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns Part number (Marking on product) DPG 60 C 300HB Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: TO-247AD ● Industry standard outline ● Epoxy meets UL 94V-0 ● RoHS compliant Ratings Symbol VRRM IR VF Definition max. repetitive reverse voltage reverse current Conditions TVJ = 25 °C VR = 300 V VR = 300 V I F = 30 A I F = 60 A I F = 30 A I F = 60 A TVJ = 25 °C TVJ = 150 °C TVJ = 25 °C TVJ = 150 °C T C = 135 °C T VJ = 175 °C min. typ. max. 300 1 0.1 1.34 1.63 1.06 1.39 30 0.70 10.5 0.95 Unit V µA mA V V V V A V mΩ K/W °C W A A A ns ns pF forward voltage I FAV VF0 rF R thJC TVJ Ptot I FSM I RM t rr CJ EAS I AR average forward current threshold voltage slope resistance rectangular, d = 0.5 for power loss calculation only thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current -55 TC t p = 10 ms (50 Hz), sine I F = 30 A; -diF /dt = 200 A/µs VR = 100 V VR = 150 V; f = 1 MHz I AS = 9 A; L = 100 µH VA = 1.5·VR typ.; f = 10 kHz = 25 °C 3 35 40 TVJ = 45 °C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 25 °C 175 160 300 reverse recovery time junction capacitance non-repetitive avalanche energy repetitive avalanche current 4 0.9 mJ A 0614 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved www.DataSheet4U.com DPG 60 C 300HB Ratings Symbol I RMS R thCH MD FC T stg Weight Definition RMS current thermal resistance case to heatsink mounting torque mounting force with clip storage temperature Conditions per pin* min. typ. max. 50 Unit A K/W 0.25 0.8 20 -55 6 1.2 120 150 Nm N °C g * Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-247AD Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.80 15.75 3.55 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 20.32 21.46 16.26 3.65 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 0614 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved www.DataSheet4U.com DPG 60 C 300HB 80 A 70 IF 60 50 40 30 20 10 0 0.0 200 25°C 100 0 100 5 0 A/µs 1000 -diF/dt 0 200 400 600 A/µs 1000 800 -diF/dt TVJ = 150°C 125°C 700 µC 600 Qr 500 400 300 10 TVJ = 125°C VR = 200 V IRM IF = 60 A 30 A 15 A 20 15 30 A 25 TVJ = 125°C VR = 200 V IF = 60 A 30 A 15 A 0.4 0.8 1.2 VF 1.6 V Fig. 1 Forward current IF vs. VF Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt 100 ns 90 trr 80 70 400 60 300 TVJ = 125°C VR = 200 V tfr 700 ns 600 500 Fig. 3 Typ. peak reverse current IRM versus -diF/dt tfr TVJ = 125°C VR = 200 V IF = 30 A VFR 20 15 10 5 0 600 800 A/µs 1000 diF/dt 35 V 30 VFR 25 1.4 1.2 Kf 1.0 0.8 0.6 0.4 0.2 0 VR = 200 V IF = 30 A diF/dt = 500 A/µs 50 IRM Qrr 40 80 120 C 160 TVJ 40 200 100 0 0 200 400 600 A/µs 1000 800 -diF/dt 0 200 400 IF = 60 A 30 A 30 15 A 20 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 10 K/W 1 Fig. 5 Typ. recovery time trr vs. -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi [K/W] ZthJC ti [s] 0.1 0.505 0.195 0.250 0.005 0.0003 0.041 0.01 0.001 0.00001 DPG60C300QB 0.0001 0.001 0.01 0.1 1 t s 10 Fig. 7 Transient thermal impedance junction to case 0614 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified © 2006 IXYS all rights reserved