DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

www.DataSheet4U.com DMN601DMK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4) K M H B C A SOT-26 Dim A B C D F H J K D F L Min 0.35 1.50 2.70 ⎯ ⎯ 2.90 1.00 0.35 0.10 0° Max 0.50 1.70 3.00 ⎯ ⎯ 3.10 1.30 0.55 0.20 8° Typ 0.38 1.60 2.80 0.95 0.55 3.00 0.05 1.10 0.40 0.15 ⎯ 0.013 0.10 J Mechanical Data • • • • • • • • Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.015 grams (approximate) S2 G2 D2 G1 L M α Drain All Dimensions in mm S1 Body Diode Gate D1 Gate Protection Diode ESD protected up to 2kV Source EQUIVALENT CIRCUIT PER ELEMENT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RθJA Tj, TSTG Value 60 ±20 305 800 225 556 -65 to +150 Units V V mA mW °C/W °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. Device mounted on FR-4 PCB. 2. No purposefully added lead. 3. Pulse width ≤10µS, Duty Cycle ≤1%. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30657 Rev. 2 - 2 1 of 4 www.diodes.com DMN601DMK © Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 60 ⎯ ⎯ 1.0 ⎯ 100 0.5 ⎯ ⎯ ⎯ Typ ⎯ ⎯ ⎯ 1.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ 1 ±10 2.5 2.4 4.0 ⎯ 1.4 50 25 5.0 Unit V µA µA V Ω ms V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA VDS =10V, ID = 200mA VGS = 0V, IS = 115mA 5. Short duration test pulse used to minimize self-heating effect. 1.4 VGS = 10V 8V 6V 5V 4V 3V 1.00 10V 8V 6V 5V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.0 TA = 125°C 0.8 4V 0.10 TA = 75°C 0.6 0.4 TA = 25°C 0.2 3V TA = -25°C 0 0 1 2 3 4 5 0.01 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 2 VGS(th), GATE THRESHOLD VOLTAGE (V) VDS = 10V ID = 1mA Pulsed VGS = 10V Pulsed TA = 125°C TA = 150°C 1.5 TA = 85°C 1 1 TA = -55°C 0.5 TA = 25°C TA = 0°C TA = -25°C 0 -50 -25 0 25 50 75 100 125 150 0.1 0.001 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 DS30657 Rev. 2 - 2 2 of 4 www.diodes.com DMN601DMK 10 7 VGS = 5V Pulsed TA = 125°C TA = 150°C TA = 85°C NEW PRODUCT 6 ID = 300mA TA = 25°C Pulsed 5 4 1 TA = -55°C TA = 0°C 3 2 ID = 150mA TA = 25°C TA = -25°C 1 0.1 0.001 0.01 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 2.5 VGS = 10V Pulsed ID = 300mA VGS = 0V Pulsed 2 ID = 150mA IDR, REVERSE DRAIN CURRENT (A) TA = 125°C TA = 150°C 0.1 TA = 85°C 1.5 TA = 25°C 1 0.01 TA = 0°C 0.5 TA = -25°C TA = -55°C 0 -75 -50 -25 0 25 50 75 100 125 150 0.001 0 0.5 1 1.5 Tch, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 1 VGS = 10V Pulsed TA= 25°C Pulsed TA = 25°C 0.1 0.1 TA = -55°C TA = 150°C 0.01 VGS = 0V TA = 85°C 0.01 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.001 0.001 0.01 0.1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current DS30657 Rev. 2 - 2 3 of 4 www.diodes.com DMN601DMK NEW PRODUCT Ordering Information Device DMN601DMK-7 Notes: (Note 6) Packaging SOT-26 Shipping 3000/Tape & Reel 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 K7K YM S2 G2 D1 K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 2005 S Apr 4 May 5 2006 T Jun 6 Jul 7 2007 U Aug 8 Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30657 Rev. 2 - 2 4 of 4 www.diodes.com DMN601DMK