www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DMBTA55
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1
.020(0.50) .012(0.30)
3
.063(1.60) .055(1.40) .108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -4 -500 225 +150 -55 to +150 Unit V V V mA mW
o o
.026(0.65) .010(0.25) .091(2.30) .067(1.70)
.045(1.15) .034(0.85)
.118(3.00) .110(2.80) .051(1.30) .035(0.90) .0043(0.11) .0035(0.09)
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
C
Electrical oCharacteristics
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle
Min -60 -60 -4 80 80 50 2%
Typ -
Max -100 -100 -0.25 -1.2 250 -
Unit V V V nA nA V V MHz
Test Conditions IC=-100µA IC=-1mA IE=-100µA VCB=-60V VCE=-50V IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-100mA, VCE=-1V
