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DC COMPONENTS CO., LTD.
R
DMBTA44
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown voltage.
SOT-23
.020(0.50) .012(0.30)
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 450 400 6 300 350 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70) .118(3.00) .110(2.80) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) .045(1.15) .034(0.85)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 hFE4 Cob 380µs, Duty Cycle
Min 450 400 6 40 50 45 40 2%
Typ 4
Max 100 500 100 0.4 0.5 0.75 0.75 300 6
Unit V V V nA nA nA V V V V pF
Test Conditions IC=100µA IC=1mA IE=10µA VCB=400V VCE=400V VEB=4V IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V VCB=20V, f=1MHz
Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1)
DC Current Gain(1)
Output Capacitance (1)Pulse Test: Pulse Width
