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DC COMPONENTS CO., LTD.
R
DMBTA06
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.020(0.50) .012(0.30)
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 80 80 4 500 225 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90) .026(0.65) .010(0.25)
.0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle
Min 80 80 4 50 50 100 2%
Typ -
Max 100 100 0.25 1.2 -
Unit V V V nA nA V V MHz
Test Conditions IC=100µA IC=1mA IE=100µA VCB=80V VCE=60V IC=100mA, IB=10mA IC=100mA, VCE=1V IC=10mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=2V, f=100MHz
Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain
(1)
Transition Frequency (1)Pulse Test: Pulse Width
