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DMBT9022
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
NEW PRODUCT
· · ·
Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Current Gain
SOT-23
A C TOP VIEW B E D G H K J L M E B C
Dim A B C D E G H J K L M
Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076
Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
Mechanical Data
· · · · · Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K1S Weight: 0.008 grams (approx.)
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
@ TA = 25°C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DMBT9022 50 40 5.0 100 225 556 -55 to +150 Unit V V V mA mW K/W °C
Characteristic
Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes:
@ TA = 25°C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(SAT) Cobo Min 50 40 5.0 ¾ ¾ 270 ¾ 2.0 Typ. Max ¾ ¾ ¾ 500 500 630 0.4 3.5 Unit V V V nA nA ¾ V pF Test Condition IC = 50mA, IE = 0 IC = 1.0mA, IB = 0 IE = 50mA, IC = 0 VCB = 30V VEB = 4.0V IC = 1.0mA, VCE = 6.0V IC = 50mA, IB = 5.0mA VCB = 12V, f = 1.0MHz, IE = 0
1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%.
DS30056 Rev. 2P-5
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DMBT9022
