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DC COMPONENTS CO., LTD.
R
DMBT9013
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.020(0.50) .012(0.30)
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 20 5 500 225 +150 -55 to +150 Unit V V V mA mW
o o
.026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90)
.0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical oCharacteristics
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 40 20 5 120 40 2%
Typ -
Max 0.1 0.1 0.6 1.2 350 -
Unit V V V µA µA V V -
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=25V, IE=0 VEB=3V, IC=0 IC=500mA, IB=50mA IC=500mA, IB=50mA IC=50mA, VCE=1V IC=500mA, VCE=1V
VCE(sat) VBE(sat) hFE1
hFE2 380µs, Duty Cycle
Classification of hFE1
Rank Range L 120~200 H 200~350
