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DC COMPONENTS CO., LTD.
R
DMBT3904
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier applications.
SOT-23
.020(0.50) .012(0.30)
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 60 40 6 200 225 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90) .026(0.65) .010(0.25)
.0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICEX
(1)
Min 60 40 6 650 40 70 100 60 30 300 2%
Typ -
Max 50 200 300 850 950 300 4
Unit V V V nA mV mV mV mV MHz pF
Test Conditions IC=10µA IC=1mA IE=10µA VCE=30V, VBE= 3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=0.1mA, VCE=1V IC=1mA, VCE=1V IC=10mA, VCE=1V IC=50mA, VCE=1V IC=100mA, VCE=1V IC=10mA, VCE=20V, f=100MHz VCB=5V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
(1)
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2
DC Current Gain
(1)
hFE3 hFE4 hFE5
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
fT Cob 380µs, Duty Cycle
