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DC COMPONENTS CO., LTD.
R
DMBT2907A
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier applications.
SOT-23
.020(0.50) .012(0.30)
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -60 -5 -600 225 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90) .026(0.65) .010(0.25)
.0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO ICEX
(1)
Min -60 -60 -5 75 100 100 100 50 200 2%
Typ -0.2 -0.5 180 -
Max -20 -50 -0.4 -1.6 -1.3 -2.6 300 8
Unit V V V nA nA V V V V MHz pF
Test Conditions IC=-10µA IC=-10mA IE=-10µA VCB=-50V VCE=-30V, VEB(off)=-0.5V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V IC=-500mA, VCE=-10V IC=-50mA, VCB=-20V, f=100MHz VCB=-10V, f=1MHz, IE=0
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2
DC Current Gain
(1)
hFE3 hFE4 hFE5
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
fT Cob 380µs, Duty Cycle
