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DC COMPONENTS CO., LTD.
R
DMBT2369
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high speed switching applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.020(0.50) .012(0.30)
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 40 40 4.5 500 225 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90) .026(0.65) .010(0.25)
.0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCES BVCEO BVEBO ICBO VCE(sat) VBE(sat) hFE1 hFE2 Cob 380µs, Duty Cycle
(1)
Min 40 40 15 4.5 700 40 20 2%
Typ -
Max 400 250 850 120 4
Unit V V V V nA mV mV pF
Test Conditions IC=10µA, IE=0 IC=10µA, IB=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 IC=10mA, IB=1mA IC=10mA, IB=1mA IC=10mA, VCE=1V IC=100mA, VCE=2V VCB=5V, f=1MHz, IE=0
Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage DC Current Gain(1) Output Capacitance (1)Pulse Test: Pulse Width
