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DFF2N60 Datasheet

N-Channel MOSFET


DFF2N60 Datasheet Preview


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DFF2N60
N-Channel MOSFET
Features
High ruggedness
RDS(on) (Max 5.5 )@VGS=10V
Gate Charge (Typical 15nC)
Improved dv/dt Capability
100% Avalanche Tested
1. Gate{
{ 2. Drain
{ 3. Source
BVDSS = 600V
RDS(ON) = 5.5 ohm
ID = 2.4A
General Description
This N-channel enhancement mode field-effect power transistor
using DI semiconductor’s advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F PAK pkg is well suited
for charger SMPS and small power inverter application.
TO-220F
123
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
VDSS
ID
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)*
Continuous Drain Current(@TC = 100°C)*
600 V
2.4 A
1.5 A
IDM Drain Current Pulsed
VGS Gate to Source Voltage
(Note 1)
9.6
±30
A
V
EAS
EAR
dv/dt
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 3)
140
2.8
4.5
mJ
mJ
V/ns
PD
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
28 W
0.21 W/°C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
- 55 ~ 150
300
°C
°C
Thermal Characteristics
* Ensure that the channel temperature does not exceed 150°C
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
4.5
62.5
Units
°C/W
°C/W
Sep, 2005. Rev. 2
Copyright@ D&I Semiconductor Co., Ltd., Korea. All rights reserved.
1/7
Page 1

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DFF2N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
BVDSS/ Breakdown Voltage Temperature
TJ coefficient
IDSS Drain-Source Leakage Current
IGSS
Gate-Source Leakage, Forward
Gate-source Leakage, Reverse
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 1.0A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =2.4A, RG =25
see fig. 13.
(Note 4, 5)
VDS =480V, VGS =10V, ID =2.4A
see fig. 12.
(Note 4, 5)
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
-
0.38
-
-
-
-
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
- 4.0
4.5 5.5
V
570 720
150 215
310 450
pF
15 35
75 140
30 60
35 60
15 20
1.6 -
6-
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =1.6A, VGS =0V
IS=2.4A, VGS=0V, dIF/dt=100A/us
NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 100mH, IAS =1.6A, VDD = 50V, RG = 50 , Starting TJ = 25°C
3. ISD 1.6, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
600
1.1
Max.
1.6
6.4
1.4
-
-
Unit.
A
V
ns
uC
2/7
Page 2

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DFF2N60
Fig 1. On-State Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
Bottom :
6.0 V
5.5 V
10-1
10-2
10-1
Notes :
1. 250µ s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
12
10
8
VGS = 10V
6
4
VGS = 20V
2
Note : TJ = 25
0
012345
ID, Drain Current [A]
Fig 5. Capacitance Characteristics
( Non-Repetitive )
6
750
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
Notes :
500 1. VGS = 0V
2. f=1MHz
Ciss
250
Coss
0 Crss
0 5 10 15 20 25 30 35
VDS, Drain-Source Voltage [V]
40
3/7
Fig 2. Transfer Characteristics
101
100
10-1
2
150oC
25oC
-55oC
Notes :
1. VDS = 50V
2. 250µ s Pulse Test
3 4 5 6 7 8 9 10
VGS, Gate-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
100 150 25
10-1
0.2
Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 2.4 A
0
0 4 8 12 16
QG, Total Gate Charge [nC]
Page 3
Part Number DFF2N60
Manufactur DnI
Description N-Channel MOSFET
Total Page 7 Pages
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