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Part Number |
DF080M-G |
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Manufacturer |
Comchip Technology |
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Semiconductor DataSheet |
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DataSheet View |
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www.DataSheet4U.com
Single-Phase Bridge Rectifiers
COMCHIP
www.comchiptech.com
DF005M-G thru DF10M-G
Reverse Voltage: 50 to 1000V Forward Current: 1.0A
DF-M
Features
- Plastic package used has Underwriters Laboratory Flammability Classification 94V-0 - Glass passivated chip junction - High surge overload rating of 50 Amperes peak - High temperature soldering guaranteed: 260°C/10 seconds, at 5 lbs. (2.3kg) tension
0.255 (6.5) 0.315 (8.00) 0.245 (6.2) 0.285 (7.24)
0.045 (1.14) 0.035 (0.89) 0.335 (8.51) 0.320 (8.12)
Mechanical Data
- Case: Molded plastic body over passivated junctions - Terminals: Plated leads solderable per MILSTD-750, Method 2026 - Mounting Position: Any - Weight: 0.014 oz., 0.4 g
0.130 (3.3) 0.120 (3.05)
0.080 (2.03) 0.050 (1.27)
0.023 (0.58) 0.018 (0.46) 0.205 (5.2) 0.195 (5.0)
0.185 (4.69) 0.150 (3.81) 0.075 (1.90) 0.055 (1.39)
0.013 (3.3) 0.0086 (0.22)
0.350 (8.9) 0.300 (7.6)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Parameter Device Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Max. average forward output rectified current at TA=40°C Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) Rating for fusing (t < 8.3ms) Typical thermal resistance per leg
(NOTE 1)
Ratings at 25°C ambient temperature unless otherwise specified.
DF DF DF DF DF Symbol 005M-G 01M-G 02M-G 04M-G 06M-G
DF DF 08M-G 10M-G
Unit
DF005 DF01 DF02 DF04 DF06 DF08 DF10 VRRM VRMS VDC IF(AV) IFSM I2t RθJA RθJL TJ, TSTG 50 35 50 100 70 100 200 140 200 400 280 400 1.0 50 10 40 15 –55 to +150 600 420 600 800 560 800 1000 700 1000 V V V A A A2sec °C/W °C
Operating junction and storage temperature range
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
DF DF DF Symbol 005M-G 01M-G 02M-G VF IR CJ
DF DF DF DF 04M-G 06M-G 08M-G 10M-G 1.1 5.0 500 25
Unit V μA pF
Maximum instantaneous forward voltage drop per leg at 1.0A Maximum reverse current at rated DC blocking voltage per leg TA = 25°C TA = 125°C
Typical junction capacitance per leg at 4.0V, 1MHz
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads
MDS0312008A
Page 1
Single-Phase Bridge Rectifiers
COMCHIP
www.comchiptech.com
Ratings and Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Derating Curve Output Rectified Current
Average Forward Output Current (A)
60 HZ Resistive or Inductive Load
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Leg
Average Forward Output Current (A)
60 50
1.0
TJ = 150°C Single Sine-Wave (JEDEC Method)
40 30 20
0.5
P.C.B mounted on 0.51 x 0.51" (13 x 13mm) Copper pads with 0.06" (1.5mm) lead length
0 20 40 60 80 100 120 140 150
10
1.0 Cycle
0 1 10 100
Ambient Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 - Typical Forward Characteristics Per Leg
Instantaneous Reverse Current (μA)
10 100
Fig. 4 - Typical Reverse Leakage Characteristics Per Leg
Instantaneous Forward Current (A)
10
1
TJ = 125°C
1
0.1
TJ = 25°C Pulse width = 300μs 1% Duty Cycle
0.01 0.4
0.1
TJ = 25°C
0.01 0 20 40 60 80 100
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Leg
Transient Thermal Impedance (°C/W)
100 100
Fig. 6 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
TJ = 25° C f = 1.0MHz Vsig = 50mVp-p
10
10
1
1
1 10 100
0.1 0.01 0.1 1 10 100
Reverse Voltage (V)
t, Heating Time (sec.)
MDS0312008A
Page 2
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