Description
DDTC114ELP PRE-BIASED (R1 = R2) SMALL SIGNALSURFACE MOUNT 100mA NPN TRANSISTOR Features NEW PRODUCT • • • • • Epitaxial Planar Die Construction Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 2 3 1 3 2 E B C R1 R2 Mechanical Data • • • • • • Case: DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: Collector Dot (See Diagram) Terminals: Finish — NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Code N5, Dot denotes Collector Side Ordering Information: See Page 4 Weight: 0.001 grams (approximate) Fig. 1 OUT 1 IN 1 B C 3 E 2 R1 R2 IN GND B 1 2 E C 3 OUT GND • • Schematic and Pin Configuration Equivalent Inverter Circuit Fig. 2 Component P/N DDTC114ELP R1(NOM) 10K R2(NOM) 10K Figure 2 Maximum Ratings Supply Voltage Input Voltage Output Current Power Dissipation (Note 3) Power Deration above 25°C Collector Current @TA = 25°C unless otherwise specified Symbol VCC VIN IO Pd Pder Ic(max) Value 50 -10 to +40 50 250 2 100 Unit V V mA mW mW/°C mA Characteristic Thermal Characteristics Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of NPN) Notes: Symbol Tj, Tstg RθJA Value -55 to +150 400 Unit °C °C/W 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1” x 0.85” x 0.062”; pad layout as shown on page 5 or Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30945 Rev. 4 - 2 1 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated Electrical Characteristics NEW PRODUCT Characteristic Off Characteristics (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage* Collector Cutoff Current* Base Cutoff Current (IBEX) Collector-Base Cut Off Current Collector-Emitter Cut Off Current, IO(OFF) Emitter-Base Cut Off Current Input Off Voltage On Characteristics (Note 4) @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL ICBO ICEO IEBO VI(OFF) 50 50 5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.16 ⎯ ⎯ ⎯ 0.5 0.5 0.5 1 0.4 0.5 V V V μA μA μA μA mA V IC = 10μA, IE = 0 IC = 1.0mA, IB = 0 B IE = 50μA, IC = 0 VCE = 50V, VEB(OFF) = 3.0V VCE = 50V, VEB(OFF) = 3.0V VCB = 50V, IE = 0 VCB = 50V, IB = 0 B VEB = 4V, IC = 0 VCC = 5V, IO = 100uA 10 15 DC Current Gain hFE 60 100 90 ⎯ ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ ⎯ Base-Emitter Turn-On Voltage* VBE(ON) ⎯ ⎯ ⎯ ⎯ 2.5 ⎯ ⎯ 7 0.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.6 ⎯ ⎯ 10 1 ⎯ ⎯ ⎯ ⎯ ⎯ 0.15 0.2 0.25 0.25 0.3 0.85 0.95 0.98 1.2 ⎯ 0.88 0.3 13 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ V V V V V V V V V V mA V KΩ ⎯ VCE = 5V, IC = 1mA VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA VCE = 5V, IC = 50mA VCE = 5V, IC = 70mA IC = 10mA, IB = 1mA B IC = 50mA, IB = 5mA B IC = 50mA, IB = 2.5mA B IC = 50mA, IB = 10mA B IC = 70mA, IB = 10mA B VCE = 5V, IC = 2mA VCE = 5V, IC = 10mA IC = 10mA, IB = 1mA, VCE = 5V B Base-Emitter Saturation Voltage* Input-On Voltage Input Current Output On Voltage (Same as VCE(SAT)) Input Resistance Resistance Ratio Small Signal Characteristics Current Gain-Bandwidth Product * Guaranteed by design. VBE(SAT) VI(ON) II VO(ON) R1 (R2/R1) IC = 50mA, IB = 5mA, VCE = 5V B VO = 0.3V, IO = 50mA VI = 5V II = 2.5mA, IO = 50mA ⎯ ⎯ fT ⎯ 250 ⎯ MHz VCE = 10V, IE = 5mA, f = 1MHz Note: 4. Short duration test pulse used to minimize self-heating effect. Pulse Test: Pulse width tp<300 us, Duty Cycle, d<=2%. DS30945 Rev. 4 - 2 2 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated Typical Characteristics Curves NEW PRODUCT 300 PD, POWER DISSIPATION (mW) @TA = 25°C unless otherwise specified 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Power Derating Curve RθJA=400 °C/W IC, COLLECTOR CURRENT (A) 250 V CE =5V VI(ON), INPUT VOLTAGE (V) 200 hFE, DC CURRENT GAIN 150 100 50 0 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Input Voltage vs. TA 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain 15 VCE(SAT), COLLECTOR VOLTAGE (V) VBE, BASE EMITTER VOLTAGE (V) 13.5 12 10.5 9 7.5 6 4.5 3 1.5 0 0.1 V CE=5V 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 VCE(SAT) vs. IC IC, COLLECTOR CURRENT (mA) Fig. 8 VBE vs. IC DS30945 Rev. 4 - 2 3 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated 30 VBE(SAT), BASE EMITTER VOLTAGE (V) NEW PRODUCT 27 24 21 18 15 12 9 6 3 0 0.1 IC/IB=10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 9 VBE(SAT) vs. IC Ordering Information (Note 6) Device DDTC114ELP-7 Notes: Marking Code N5 Packaging DFN1006-3 Shipping 3000/Tape & Reel 6. For packaging details, please see page 5 or go to our website at http://www.diodes.com/ap2007.pdf. Marking Information N5 N5 = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month e.g. 9 = September Fig. 13 Date Code Key Year Code Month Code Jan 1 2007 U Feb 2 Mar 3 2008 V Apr 4 May 5 2009 W Jun 6 Jul 7 2010 X Aug 8 Sep 9 2011 Y Oct O Nov N 2012 Z Dec D DS30945 Rev. 4 - 2 4 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated Package Outline Dimensions NEW PRODUCT DFN1006-3 G H Dim A B C D G H Min 0.95 0.55 0.45 0.20 0.47 0 0.10 0.20 — — Max 1.05 0.65 0.55 0.30 0.53 0.05 0.20 0.30 — — Typ 1.00 0.60 0.50 0.25 0.50 0.03 0.15 0.25 0.35 0.40 A K B C M K L M N All Dimensions in mm D N L Fig. 14 Suggested Pad Layout: (Based on IPC-SM-782) C DFN1006-3 Z G1 1.1 0.3 0.2 0.7 0.25 0.4 0.7 X1 G2 X X1 Y C X G2 All Dimensions in mm Y Z G1 Fig. 15 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30945 Rev. 4 - 2 5 of 5 www.diodes.com DDTC114ELP © Diodes Incorporated

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DDTC114ELP

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