Standard Gate SCR

www.DataSheet4U.com DCR6C60 Standard Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 600V IT(RMS) = 3.8 A 3.Gate ITSM = 6A Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A ) Low On-State Voltage (1.4V(Typ.)@ ITM) Pb - Free Packages are Available TO-126 General Description Standard gate triggering thyristor is suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =106 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 3.8 6 40 21 50 Units V A A A A2 s A/ W W A V °C °C TC = 106 °C, pulse width TC = 106 °C,pulse width TC = 106 °C, pulse width TC =106 °C, pulse width 1.0 1.0 1.0 1.0 5 0.5 2 5.0 - 40 ~ 125 - 40 ~ 150 April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com DCR6C60 Electrical Characteristics Symbol Items VAK = VDRM TC = 25 °C TC = 125 °C ITM = 9 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 °C 15 mA tp=380 10 200 1.6 V ( TC = 25 °C unless otherwise noted ) Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) VTM VD = 6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 °C 1.5 V VGD dv/dt Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage VAK = 12 V, RL=100 TC = 125 °C 0.2 200 V Linear slope up to VD = VDRM 67% , Gate open TJ = 125°C IT = 100mA, Gate Open V/ IH Holding Current TC = 25 °C 20 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance Junction to case Junction to Ambient 3.12 89 °C/W °C/W Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement. 2/5 www.DataSheet4U.com DCR6C60 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 140 1 10 Max. Allowable Case Temperature [ C] o VGM(5V) PGM(5W) 120 θ = 180 100 o Gate Voltage [V] IGM(2A) 10 0 PG(AV)(0.5W) 25 C o 80 2 60 360° : Conduc t ion Angl e VGD(0.2V) 10 -1 40 0 1 2 3 4 10 -1 10 0 10 1 10 2 10 3 10 4 Gate Current [mA] Average On-State Current [A] Fig 3. Typical Forward Voltage 100 10 1 Fig 4. Thermal Response Transient Thermal Impedance [ C/W] On-State Current [A] o 10 0 10 125 C o 10 -1 25 C o 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 10 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature VGT(25oC) IGT(25 C) VGT(t C) IGT(t C) o o 1 1 o 0.1 -50 0 50 100 o 150 0.1 -50 0 50 100 o 150 Junction Temperature[ C] Junction Temperature[ C] 3/5 www.DataSheet4U.com DCR6C60 Fig 7. Typical Holding Current 10 7 Fig 8. Power Dissipation Max. Average Power Dissipation [W] θ = 180 6 o o o 5 θ = 30 o θ = 60 θ = 90 θ = 120 o IH(25oC) IH(t C) 4 o 1 3 2 1 0.1 -50 0 0 50 100 o 150 0 1 2 3 4 Junction Temperature[ C] Average On-State Current [A] 4/5 www.DataSheet4U.com DCR6C60 TO-126 Package Dimension mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 0.055 0.126 1.5 0.047 0.091 0.181 0.024 0.034 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 0.150 0.098 0.059 Inch Typ. Max. 0.311 0.441 0.579 0.114 Dim. A B C D E F G H I J K L A E B D F 3 C 2 1 G L J H K 1. Gate 2. Anode 3. Cathode 5/5