www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DC8050
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 2W output amplifier of portable radios in class B push-pull operation.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IB PD PD TJ TSTG
Rating 40 25 6 1.5 500 1 2 +150 -55 to +150
Unit V V V A mA W W
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min 40 25 6 45 85 40 100 2%
Typ -
Max 0.1 0.1 0.5 1.2 1 500 -
Unit V V V µA µA V V V MHz
Test Conditions IC=100µA IC=2mA IE=100µA VCB=35V VEB=6V IC=0.8A, IB=80mA IC=0.8A, IB=80mA IC=10mA, VCE=1V IC=5mA, VCE=1V IC=100mA, VCE=1V IC=800mA, VCE=1V IC=50mA, VCE=10V
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width
(1) (1)
VCE(sat) VBE(sat) VBE(on) hFE1 hFE2 hFE3
fT 380µs, Duty Cycle
Classification of hFE2
Rank Range
B
85~160
C
120~200
D
160~300
E
250~500
