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Part Number |
DBT236-600 |
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Manufacturer |
DnI |
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Semiconductor DataSheet |
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DataSheet View |
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DBT236-600
Triacs / Sensitive Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 6 A ) High Commutation dv/dt Sensitive Gate Triggering 4 Mode Non-isolated Type
2.T2
BVDRM = 600V IT(RMS) = 6 A
3.Gate
1.T1
ITSM = 60 A TO-220
General Description
This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, AC switching applications, phase control application such as fan speed, light controllers and home appliance equipment.
12
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz, Gate open TC =101 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 101 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 6.0 60/66 18 3.0 0.3 2.0 10 - 40 ~ 125 - 40 ~ 150
Units
V A A A 2s W W A V °C °C
April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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DBT236-600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 8 A, Inst. Measurement
Ratings Min. Typ. Max.
1.0 1.4 1.6 5 5
Unit
IDRM VTM I+GT1 I -GT1
mA V
Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance
VD = 6 V, RL=10 5 8 12 1.4 1.4 VD = 6 V, RL=10 1.4 1.6 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.5 A/ms, VD=2/3 VDRM 0.2 5 10 Junction to case Junction to Ambient 2.8 60 2.0
mA
V
V
V/
mA °C/W °C/W
Notes : 1. Pulse Width 300us , Duty cycle 2%
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DBT236-600
Fig 1. Gate Characteristics
10
10
1
Fig 2. On-State Voltage
2
VGM (10V) PGM (3W)
PG(AV) (0.3W) 25 I+GT3 25 I+GT1 I -GT1 I -GT3 VGD(0.2V)
10
-1
On-State Current [A]
Gate Voltage [V]
10
1
TJ = 125 C
o
IGM (2A)
10
0
TJ = 25 C
10
0
o
10
0
10
1
10
2
10
3
10
4
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
Allowable Case Temperature [ oC]
10 9
Fig 4. On State Current vs. Allowable Case Temperature
130
Power Dissipation [W]
8 7
360°
2
θ = 180 o θ = 150 θ = 120 θ = 90
o o o o
o
120
6
: Conduction Angle
5 4 3 2 1 0 0 1 2 3 4 5 6
θ = 60 θ = 30
θ = 30
2
o o o o
110
360° : Conduction Angle
θ = 60 θ = 90
100
7 8
θ = 120 o θ = 150 o θ = 180
3 4 5 6 7
0
1
2
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
80 70
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
3
Surge On-State Current [A]
60Hz
50 40 30 20 10 0 0 10
o
X 100 (%)
60
V
V GT1
10
2
+ GT1 -
V GT3
50Hz
VGT (25 C)
VGT (t C)
o
V
1
+ GT3
10
1
10
2
10
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
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DBT236-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10
3
Fig 8. Transient Thermal Impedance
10
I
10
2
+ GT1 GT1 GT3
I I
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
X 100 (%)
o
1
I
10
1
+ GT3
-50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
6V V
A
RG
Test Procedure
Test Procedure
Test Procedure
Test Procedure
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DBT236-600
TO-220 Package Dimension
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
mm Typ.
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Inch Typ.
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
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