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DBT141-600
Triacs / Sensitive Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 25 A ) High Commutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10mA) Non-isolated Type
2.T2
BVDRM = 600V IT(RMS) = 25 A
3.Gate
1.T1
ITSM = 250 A TO- 3P
General Description
This device is sensitive gate triggering triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, high power AC switching applications, such as fan speed, lighting controllers and home appliance equipment.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition Ratings
600 TC = 86 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =85 °C, Pulse width Over any 20ms period tp = 20 tp = 20 , TJ=125°C , TJ=125°C 1.0 25 225/250 260 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 6.2
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V °C °C g
July, 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DBT141-600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 35 A, Inst. Measurement
Ratings Min. Typ. Max.
5.0 1.55 10 10
Unit
IDRM VTM I+GT1 I -GT1
mA V
Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance
VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -12.5 A/ms, VD=2/3 VDRM 0.2 6 35 Junction to case 1.3
mA
V
V
V/
mA °C/W
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DBT141-600
Fig 1. Gate Characteristics
10
3
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
10
2
TJ = 125 C
o
IGM (2A)
10
1
TJ = 25 C
o
10
-1
VGD (0.2V)
1
10
10
2
10
3
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
o
Fig 4. On State Current vs. Allowable Case Temperature
Allowable Case Temperature [ oC]
130
35 30
Power Dissipation [W]
2
25
360°
20 15 10 5 0 0
: Conduction Angle
θ θ θ θ θ
= 180 o = 150 o = 120 o = 90 o = 60
o
120
110
θ = 30
θ = 30
100
2
o o
90
360° : Conduction Angle
θ = 60 o θ = 90 o θ = 120 o θ = 150o θ = 180
15 20 25 30
80
5 10 15 20 25 30
0
5
10
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
280
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
240
Surge On-State Current [A]
200
60Hz
o
o
160
VGT (25 C)
VGT (t C)
1
120
50Hz
80
V V V
+ GT1 _ GT1 _ GT3
40
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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DBT141-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
I
GT3
IGT (25 C)
IGT (t C)
o
o
1
o
_
Transient Thermal Impedance [ C/W]
I I
+ GT1 _ GT1
1
0.1 -50
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
Test Procedure
Test Procedure
Test Procedure
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DBT141-600
TO - 3P Package Dimension
F G
J
C A
Ø
E D K L
B M H I N O
D IM E N S IO N M in mm T yp. M ax
A 1 9 .7 0 1 9 .9 0 2 0 .1 0
B 1 6 .2 0 1 6 .5 0 1 6 .8 0
C 3 .6 0 3 .8 0 4 .0 0
D 3 .3 0 3 .5 0 3 .7 0
E 1 8 .5 0 1 8 .7 0 1 8 .9 0
F 4 .6 0 4 .8 0 5 .0 0
G 1 .4 5 1 .5 0 1 .6 5
H 0 .5 5 0 .6 0 0 .7 5
D IM E N S IO N M in mm T yp. M ax
I 1 .2 0 1 .4 0 1 .6 0
J 1 5 .4 0 1 5 .6 0 1 5 .8 0
K 1 .8 0 2 .0 0 2 .2 0
L 2 .8 0 3 .0 0 3 .2 0
M 0 .8 0 1 .0 0 1 .2 0
N
O
5 .4 5
1 0 .9 0
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