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Part Number |
DBT139F-600 |
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Manufacturer |
DnI |
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Semiconductor DataSheet |
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DataSheet View |
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www.DataSheet4U.com
DBT139F-600
UL No. E256958
Triac / Sensitive Gate
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) High Commutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10mA) Isolation Voltage ( VISO = 2500V AC )
2.T2
BVDRM = 600V IT(RMS) = 16 A
3.Gate
1.T1
ITSM = 155 A TO-220F
General Description
This device is fully isolated package suitable for sensitive gate triggering , direct coupling to TTL, HTL, CMOS and application such as various logic functions,medium power AC switching applications, such as fan speed control, lighting controllers and home appliance equipment.
1 2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz,Gate Open TC = 36 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =36 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass
Ratings
600 16 145/155 105 5.0 0.5 2.0 10 2500 - 40 ~ 125 - 40 ~ 150 2.0
Units
V A A A2 s W W A V V °C °C g
July, 2005. Rev. 1 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DBT139F-600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement
Ratings Min. Typ. Max.
2.0 1.6 10 10
Unit
IDRM VTM I+GT1 I -GT1
mA V
Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) IV Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance IV
VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 0.2 10 20 Junction to case 3.5
mA
V
V
V/
mA °C/W
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DBT139F-600
Fig 1. Gate Characteristics Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
10
2
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
TJ = 125 C
10
1
o
IGM (2A)
TJ = 25 C
10
0
o
VGD (0.2V)
10
-1
10
1
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
25
Fig 4. On State Current vs. Allowable Case Temperature
o
130
Allowable Case Temperature [ oC]
θ = 180 Power Dissipation [W]
20
360° 2
θ = 150 θ = 120 θ = 90 θ = 60 θ = 30
o o o
o o
120 110 100 90 80 70 60
360° 2
15
: Conduction Angle
10
θ = 30 θ = 60 θ = 90
o o o o o
θ = 120
5
50 40
: Conduction Angle
θ = 150 o θ = 180
10 12 14 16 18
0 0 2 4 6 8 10 12 14 16 18 20
30 0 2 4 6 8 20
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
150
VGT (t C)
o
o
60Hz
100
VGT (25 C)
1
50
50Hz
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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DBT139F-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I I
o
+ GT1 _ GT1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
1
I
_ GT3
0.1 -50
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
Test Procedure
Test Procedure
Test Procedure
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DBT139F-600
TO-220F Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O 1 2
Min. 10.4 6.18 9.55 13.47 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 13.73 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.530 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.540 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.146 0.126 0.059
F B
A E
H
I
1
C L 1 D 2 3 J K M
2
G
1. T1 2. T2 3. Gate
N O
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DBT139F-600
TO-220F Package Dimension, Forming mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O P 1 2
Min. 10.4 6.18 9.55 8.4 6.05 1.26 3.17 1.87 2.57
Max. 10.6 6.44 9.81 8.66 6.15 1.36 3.43 2.13 2.83
Min. 0.409 0.243 0.376 0.331 0.238 0.050 0.125 0.074 0.101
Max. 0.417 0.254 0.386 0.341 0.242 0.054 0.135 0.084 0.111
2.54 5.08 2.51 1.25 0.45 0.6 5.0 3.7 3.2 1.5 2.62 1.55 0.63 1.0 0.099 0.049 0.018 0.024
0.100 0.200 0.103 0.061 0.025 0.039 0.197 0.146 0.126 0.059
F B
A E
H
I
1
C L 1 2 3 N J K O P M
2
G
D
1. T1 2. T2 3. Gate
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