Triacs

www.DataSheet4U.com DBT139-600 Triac / Sensitive Gate Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) High Commutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10mA) Non-isolated Type 2.T2 BVDRM = 600V IT(RMS) = 16 A 3.Gate 1.T1 ITSM = 155 A TO-220 General Description This device is sensitive gate triggering triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions,medium power AC switching applications, such as fan speed control, lighting controllers and home appliance equipment. 12 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz,Gate Open TC = 36 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =36 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 16 145/155 105 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 Units V A A A2 s W W A V °C °C July, 2005. Rev. 1 copyright@ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com DBT139-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement Ratings Min. Typ. Max. 2.0 1.6 10 10 Unit IDRM VTM I+GT1 I -GT1 mA V Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-c) IV Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance IV VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM 0.2 10 20 Junction to case ( Half Cycle ) Junction to ambient ( Free Air ) 1.7 60 mA V V V/ mA °C/W °C/W 2/5 www.DataSheet4U.com DBT139-600 Fig 1. Gate Characteristics Fig 2. On-State Voltage 10 1 VGM (10V) On-State Current [A] 10 2 Gate Voltage [V] PGM (5W) PG(AV) (0.5W) 25 10 0 TJ = 125 C 10 1 o IGM (2A) TJ = 25 C 10 0 o VGD (0.2V) 10 -1 10 1 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 25 Fig 4. On State Current vs. Allowable Case Temperature o 130 Allowable Case Temperature [ oC] θ = 180 Power Dissipation [W] 20 360° 2 θ = 150 θ = 120 θ = 90 θ = 60 θ = 30 o o o o o 120 110 100 90 80 70 60 360° 2 15 : Conduction Angle 10 θ = 30 θ = 60 θ = 90 o o o o o θ = 120 5 50 40 : Conduction Angle θ = 150 o θ = 180 10 12 14 16 18 0 0 2 4 6 8 10 12 14 16 18 20 30 0 2 4 6 8 20 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 200 Fig 6. Gate Trigger Voltage vs. Junction Temperature 10 Surge On-State Current [A] 150 VGT (t C) o o 60Hz 100 VGT (25 C) 1 50 50Hz 0 0 10 10 1 10 2 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 www.DataSheet4U.com DBT139-600 Fig 7. Gate Trigger Current vs. Junction Temperature 10 10 Fig 8. Transient Thermal Impedance 1 I I o + GT1 _ GT1 Transient Thermal Impedance [ C/W] IGT (25 C) IGT (t C) o o 1 I _ GT3 0.1 -50 0 50 100 o 150 0.1 -2 10 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10 10 10 6V V A 6V A V 6V A V RG RG RG Test Procedure Test Procedure Test Procedure 4/5 www.DataSheet4U.com DBT139-600 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 E B A H I F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/ 5/5