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DBT137-600
Triac / Sensitive Gate
Symbol
2.T2
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 8 A ) High Commutation dv/dt Sensitive Gate Triggering 3 Mode ( IGT = 10mA) Non-isolated Type
3.Gate 1.T1
BVDRM = 600V IT(RMS) = 8 A ITSM = 77 A TO-220
General Description
This device is sensitive gate triggering triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions,medium power AC switching applications, such as fan speed control, lighting controllers and home appliance equipment.
1 2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz,Gate Open
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 8.0 70/77 24 1.0us 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150
Units
V A A A2 s W W A V °C °C
TC = 86 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =86 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C
July, 2005. Rev. 1 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DBT137-600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 10 A, Inst. Measurement
Ratings Min. Typ. Max.
1.0 1.6 10 10
Unit
IDRM VTM I+GT1 I -GT1
mA V
Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) IV Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance IV
VD = 6 V, RL=10 10 25 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -3.0 A/ms, VD=2/3 VDRM 0.2 5.0 10 Junction to case ( Half Cycle ) Junction to ambient ( Free Air ) 2.4 60
mA
V
V
V/
mA °C/W °C/W
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DBT137-600
Fig 1. Gate Characteristics
10
2
Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
PGM (5W)
Gate Voltage [V]
PG(AV) (0.5W) 25 IGM (2A)
10
0
10
1
TJ = 125 C
o
TJ = 25 C
10
0
o
VGD (0.2V)
10
-1
10
1
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
12 11 10
2
Fig 4. On State Current vs. Allowable Case Temperature
o
Allowable Case Temperature [ oC]
Power Dissipation [W]
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7
360°
θ = 180 o θ = 150 o θ = 120 θ = 90 θ = 60 θ = 30
o
130
120
110
: Conduction Angle
o o
θ = 30
100
2
o
θ = 60
o o o o
90
360°
θ = 90
θ = 120
80
: Conduction Angle
θ = 150 o θ = 180
5 6 7 8 9 10
8
9
10
70 0 1 2 3 4
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
90 80
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
70 60 50 40 30 20 10 0 0 10
60Hz
VGT (25 C)
VGT (t C)
o
o
1
50Hz
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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DBT137-600
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
I I
+ GT1 _ GT1
I
_ GT3
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
1
0.1 -50
0
50
100
o
150
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
6V
V
A
6V
A V
6V
A V
RG
RG
RG
Test Procedure
Test Procedure
Test Procedure
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DBT137-600
TO-220 Package Dimension mm Typ. Inch Typ.
Dim. A B C D E F G H I J K L M N O
Min. 9.7 6.3 9.0 12.8 1.2
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142
E B
A
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
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