Triacs

www.DataSheet4U.com DBT136-600 Triacs / Sensitive Gate Symbol Features Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt Sensitive Gate Triggering 4 Mode Non-isolated Type 2.T2 BVDRM = 600V IT(RMS) = 4 A 3.Gate 1.T1 ITSM = 40 A TO-220 General Description This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. 12 3 Absolute Maximum Ratings Symbol VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Sine wave, 50 to 60 Hz, Gate open TC = 107 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp = 10ms TC = 107 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us Parameter Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 600 4 40/44 3.1 5 0.5 2 5 - 40 ~ 125 - 40 ~ 150 Units V A A A 2s W W A V °C °C April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com DBT136-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State Current Peak On-State Voltage Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 5 A, Inst. Measurement Ratings Min. Typ. Max. 0.5 1.4 1.7 5 5 Unit IDRM VTM I+GT1 I -GT1 mA V Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 Gate Trigger Voltage V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a) Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Thermal Impedance VD = 6 V, RL=10 5 10 1.5 1.5 VD = 6 V, RL=10 1.5 2.5 TJ = 125 °C, VD = 1/2 VDRM TJ = 125 °C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM 0.2 5.0 5 Junction to case Junction to Ambient (In the free air ) 3.0 60 mA V V V/ mA °C/W °C/W 2/5 www.DataSheet4U.com DBT136-600 Fig 1. Gate Characteristics 10 1 Fig 2. On-State Voltage 10 2 VGK = 5V PGK = 5W On-State Current [A] PG(AV) = 0.5W Gate Voltage [V] 10 1 25 IGM=2A 10 0 125 C 10 0 o 25 C o VGD = 0.2V 10 -1 10 1 -1 10 10 2 10 3 0.5 1.0 1.5 2.0 2.5 3.0 Gate Current [mA] On-State Voltage [V] Fig 3. On State Current vs. Maximum Power Dissipation 7 6 2 θ = 180 θ = 150 o o o o Fig 4. On State Current vs. Allowable Case Temperature 130 5 360° θ = 120 θ = 90 θ = 60 θ = 30 o Allowable Case Temperature [ C] Power Dissipation [W] 120 θ = 30 θ = 60 o o o o o 4 3 2 1 0 0 : Conduction Angle o o 2 θ = 90 110 360° : Conduction Angle θ = 120 θ = 150 o θ = 180 1 2 3 4 5 100 0 1 2 3 4 5 RMS On-State Current [A] RMS On-State Current [A] Fig 5. Surge On-State Current Rating ( Non-Repetitive ) Fig 6. Gate Trigger Voltage vs. Junction Temperature 35 10 30 Surge On-State Current [A] 25 60Hz o 20 VGT (25 C) VGT (t C) o 1 15 50Hz 10 5 0 0 10 10 1 10 2 10 3 0.1 -50 0 50 100 o 150 Time (cycles) Junction Temperature [ C] 3/5 www.DataSheet4U.com DBT136-600 Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 10 1 IGT (25 C) I I 1 + GT1 GT1 GT3 Transient Thermal Impedance [ C/W] IGT (t C) o o o I 10 0 I + GT3 0.1 -50 10 0 50 100 o -1 150 10 -3 10 -2 10 -1 10 0 10 1 10 2 Junction Temperature [ C] Time (sec) Fig 9. Gate Trigger Characteristics Test Circuit 10 10 10 10 6V V A 6V A V 6V A V RG RG RG 6V V A RG Test Procedure Test Procedure Test Procedure Test Procedure 4/5 www.DataSheet4U.com DBT136-600 TO-220 Package Dimension mm Typ. Inch Typ. Dim. A B C D E F G H I J K L M N O Min. 9.7 6.3 9.0 12.8 1.2 Max. 10.1 6.7 9.47 13.3 1.4 Min. 0.382 0.248 0.354 0.504 0.047 Max. 0.398 0.264 0.373 0.524 0.055 1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.25 0.45 0.6 3.6 3.4 1.4 2.7 5.15 2.6 1.55 0.6 1.0 0.118 0.049 0.094 0.197 0.087 0.049 0.018 0.024 0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.061 0.024 0.039 0.142 E B A H I F C M G 1 D 2 3 L 1. T1 2. T2 3. Gate N O J K 5/5