TRANSISTOR

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors D965 FEATURES TRANSISTOR£¨NPN £© TO¡ª 92 1.EMITTER Power dissipation PCM : 0.75 W£¨ Tamb=25¡æ£© Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE£¨£© 1 DC current gain HFE£¨£© 2 HFE£¨£© 3 Collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 3. BASE 1 2 3 unless Test otherwise MIN 42 22 6 specified£© TYP MAX UNIT V V V 0.1 0.1 ¦Ì A ¦Ì A conditions Ic=1m A£¬IE=0 Ic= 1 IE= 10 mA£¬IB=0 ¦Ì A£¬IC=0 VCB= 30 V , IE=0 VEB= 6 V£¬IC=0 VCE= 2 V, mA VCE= 2V, VCE= 2V, mA IC= 0.15 150 340 150 IC = 500 mA IC = 2000 950 IC=3000mA,IB=100 mA 0.35 V CLASSIFICATION OF H FE(2) Rank Range R 340-600 T 560-950 TO-92 PACKAGE OUTLINE DIMENSIONS D D1 A A1 E b ¦Õ e e1 Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min 3.300 1.100 0.380 0.360 4.400 3.430 4.300 1.270TYP 2.440 14.100 0.000 2.640 14.500 1.600 0.380 4.700 Max 3.700 1.400 0.550 0.510 4.700 Min L Dimensions In Inches Max 0.146 0.055 0.022 0.020 0.185 0.185 0.050TYP 0.096 0.555 0.000 0.104 0.571 0.063 0.015 0.130 0.043 0.015 0.014 0.173 0.135 0.169 C