Standard Gate SCR

www.DataSheet4U.com D2P4M Sensitive Gate Silicon Controlled Rectifiers Features 1.Cathode Symbol 2. Anode BVDRM = 400V IT(RMS) = 2.0 A 3.Gate ITSM = 4 A Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current ( IT(RMS)= 2.0 A ) On-State Voltage (2.2V(max) @ ITM= 4A) Pb - Free Packages are Available TO-126 General Description Sensitive-gate triggering thyristor is suitable for the application where requiring low gate triggerring current system Used for electric blanket ,electronic jar ,temperature control,lighting control such as a entertainment display. Automatic ignition system , Battery charger . 1 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =77 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC= 77 °C, pulse width TC =77°C,pulse width TC =77 °C, pulse width TC= 77 °C, pulse width 1.0 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 400 2.0 4 20 1.65 0.5 0.1 0.2 5.0 - 40 ~ 125 - 40 ~ 125 Units V A A A A 2s W W A V °C °C April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com D2P4M Electrical Characteristics Symbol Items VAK = VDRM TC = 25 °C TC = 125 °C ITM = 4 A VAK = 6 V(DC), RL=10 IGT Gate Trigger Current (2) TC = 25 °C 200 tp = 380 10 200 2.2 V ( TC = 25 °C unless otherwise noted ) Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) VTM VD =6 V(DC), RL=10 VGT Gate Trigger Voltage (2) TC = 25 °C 1.5 V VGD dv/dt Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage VAK = 12 V, RL=100 TC = 125 °C 0.2 10 V Linear slope up to VD = VDRM 67% Tj = 125 °C RGK = 1 Kohm IT = 20mA , Gate Open V/ IH HoldIing Current TC = 25 °C 3 10 75 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance Junction to case Junction to Ambient °C/W °C/W Notes : 1. Pulse Width = 1.0 ms , Duty cycle 1% 2. RGK Current not Included in measurement 2/5 www.DataSheet4U.com D2P4M Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 140 1 10 Max. Allowable Case Temperature [ C] 120 VGM(5V) PGM(0.5W) o 100 Gate Voltage [V] θ = 180 80 o PG(AV)(0.1W) 10 0 IGM(0.2A) 60 2 25 C o 40 360° 20 VGD(0.2V) 10 -1 : Conduc t ion Angl e 0 0 1 2 3 4 5 6 10 0 10 1 10 2 10 3 10 4 Gate Current [mA] Average On-State Current [A] Fig 3. Typical Forward Voltage 10 1 Fig 4. Thermal Response 10 2 Transient Thermal Impedance [ C/W] o On-State Current [A] 10 1 Rθ (J-C) 10 0 125 C o 10 0 25 C o 10 -1 0.5 1.0 1.5 2.0 2.5 10 -1 10 -2 10 -1 10 0 10 1 10 2 10 3 On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. 10 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature VGT(toC) VGT(25oC) 1 0.1 -50 0 50 100 o 150 IGT(25 C) IGT(t C) o o 1 0.1 -50 0 50 100 o 150 Junction Temperature[ C] Junction Temperature[ C] 3/5 www.DataSheet4U.com D2P4M Fig 7. Typical Holding Current 10 8 Fig 8. Power Dissipation Max. Average Power Dissipation [W] θ = 120 θ = 90 6 θ = 30 o o o o θ = 180 o θ = 60 IH(25oC) IH(t C) 1 o 4 2 2 360° : Conduc t ion Angl e 0.1 -50 0 50 100 o 150 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Junction Temperature[ C] Average On-State Current [A] 4/5 www.DataSheet4U.com D2P4M TO-126 Package Dimension Dim. A B C D E F G H I J K L mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.126 A E B D F 1 C 2 3 G L 1. Cathode T1 2. Anode T2 3. Gate J K H I 5/5