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Sanyo Semicon Device
Sanyo Semicon Device

D2634 Datasheet

Search -----> 2SD2634


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Ordering number : ENN6474B
2SD2634
NPN Triple Diffused Planar Silicon Transistor
2SD2634
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Package Dimensions
unit : mm
2174A
[2SD2634]
16.0 3.4
5.6
3.1
2.8
2.0 2.1
0.7 0.9
Specifications
Absolute Maximum Ratings at Ta=25°C
12 3
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
Conditions
Ratings
1500
800
6
8
20
3.0
65
150
--55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
min
800
40
Ratings
typ
max
Unit
10 µA
1.0 mA
V
130 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3147 / O2500 TS (KOTO) TA-2914 No.6474-1/4
Page 1

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Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
2SD2634
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
VF
tf
Conditions
IC=4.5A, IB=0.9A
IC=4.5A, IB=0.9A
VCE=5V, IC=1A
VCE=5V, IC=5A
IEC=7A
IC=3A, IB1=0.6A, IB2=--1.2A
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
VR
IB1
IB2
RB
50
+
100µF
VBE= --2V
OUTPUT
RL
66.7
+
470µF
VCC=200V
Ratings
min typ
10
5
max
3
1.5
8
2
0.3
Unit
V
V
V
µs
8
7 2.0A 1.8A
6
5
4
3
IC -- VCE
1.6A 1.4A 1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
2
0.05A
1
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT01800
hFE -- IC
5
VCE=5V
3
2
Ta=120°C
25°C
10 -40°C
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT01802
IC -- VBE
9
VCE=5V
8
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT01801
VCE(sat) -- IC
5
IC / IB=5
3
2
1.0
7
5
3
2
0.1
7
25°C
5 120°C
Ta=--40°C
3
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT01803
No.6474-2/4
Page 2

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7
5
3
2
1.0
7
5
3
2
SW Time -- IC
tstg
2SD2634
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
10
7
5
3
2
1.0
7
5
tf
3
2
SW Time -- IB2
tstg
VCC=200V
IC=3A
IB1=0.6A
R load
tf
0.1
0.1
2
5
3 ICP=20A
2
10 IC=8A
7
5
3
2
3 5 7 1.0
23
Collector Current, IC -- A
For ward Bias A S O
PC =65W
5 7 10
IT01804
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
3.5 PC -- Ta
5 71000
IT01806
3.0
0.1
0.1
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
10
70
65
60
23
5 7 1.0
23
57
Base Current, IB2 -- A
Reverse Bias A S O
IT01805
L=500µH
IB2=--1A
Tc=25°C
Single pulse
2 3 5 7 100
2 3 5 7 1000 2 3
Collector-to-Emitter Voltage, VCE -- V IT01807
PC -- Tc
2.5
2.0 No heat sink
1.5
50
40
30
1.0 20
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01808
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01809
No.6474-3/4
Page 3
Part Number D2634
Manufactur Sanyo Semicon Device
Description Search -----> 2SD2634
Total Page 4 Pages
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