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Sanyo Semicon Device
Sanyo Semicon Device

D2627 Datasheet

NPN Triple Diffused Planar Silicon Transistor


D2627 Datasheet Preview


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Ordering number : ENN6478
2SD2627
NPN Triple Diffused Planar Silicon Transistor
2SD2627
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Package Dimensions
unit : mm
2079C
10.0
3.2
[2SD2627]
4.5
2.8
0.9
1.2
0.75
1 23
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta=25°C
Tc=25°C
2.55
Conditions
2.55
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI-LS
Ratings
1500
800
6
6
15
2.0
30
150
-55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
min
800
40
Ratings
typ
max
Unit
10 µA
1.0 mA
V
130 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91400 TS IM TA-2853 No.6478-1/4
Page 1

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Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Diode Forward Voltage
Fall Time
2SD2627
Symbol
VCE(sat)
VBE(sat)
hFE1
hFE2
VF
tf
Conditions
IC=3.15A, IB=0.63A
IC=3.15A, IB=0.63A
VCE=5V, IC=0.5A
VCE=5V, IC=3.5A
IEC=6A
IC=2A, IB1=0.4A, IB2=--0.8A
Switching Time Test Circuit
INPUT
PW=20µs
D.C.1%
50
IB1
IB2
RB
VR +
100µF
VBE= --2V
OUTPUT
+
470µF
RL=100
VCC=200V
Ratings
min typ
10
5
max
3
1.5
8
2
0.3
Unit
V
V
V
µs
IC -- VCE
6
5
2.0A 1.8A
1.6A
1.4A 1.2A
1.0A
0.8A
4 0.6A
0.4A
3
0.2A
2
0.05A
1
0 IB=0
0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT01810
hFE -- IC
5
VCE=5V
3
2
Ta=1202°5C°C
10 -40°C
7
5
3
2
1.0
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT01812
IC -- VBE
7
VCE=5V
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V IT01811
VCE(sat) -- IC
5
IC / IB=5
3
2
1.0
7
5
3
2
0.1 25°C Ta= --40°C
7
5 120°C
3
0.1
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT01813
No.6478-2/4
Page 2

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5
3
2
1.0
7
5
3
2
SW Time -- IC
tstg
2SD2627
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
10
7
5
3
2
1.0
7
5
tf 3
2
SW Time -- IB2
tstg
VCC=200V
IC=2A
IB1=0.4A
R load
0.1
0.1
2
5
3
2 ICP=15A
3 5 7 1.0
23
Collector Current, IC -- A
Forward Bias A S O
5 7 10
IT01814
10
7
IC=6A
5
3
2
PC =30W
1.0
7
5
3
2
0.1
7
5
3
2
Tc=25°C
0.01 Single pulse
1.0 2 3 5 7 10
2 3 5 7 100 2 3
Collector-to-Emitter Voltage, VCE -- V
PC -- Ta
3.0
5 71000
IT01816
0.1
0.1
5
3
2
23
5 7 1.0
2
Base Current, IB2 -- A
Reverse Bias A S O
35
IT01815
L=500µH
IB2= --1A
10
7
5
3
2
1.0
7
5
3
2 Tc=25°C
Single pulse
0.1
10 2 3 5 7 100
2 3 5 7 1000
Collector-to-Emitter Voltage, VCE -- V
PC -- Tc
40
23
IT01817
2.5
2.0
1.5 No heat sink
1.0
0.5
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01818
30
20
10
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01819
No.6478-3/4
Page 3

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2SD2627
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of September, 2000. Specifications and information herein are subject
to change without notice.
PS No.6478-4/4
Page 4
Part Number D2627
Manufactur Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Total Page 4 Pages
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