Nch IGBT for STROBE FLASHER

www.DataSheet4U.com MITSUBISHI IGBT MITSUBISHI IGBT CY25AAJ-8 CY25AAJ-8 Nch IGBT STROBE FLASHER Nch IGBT for for STROBE FLASHER CY25AAJ-8 OUTLINE DRAWING ➇ ➄ Dimensions in mm 6.0 4.4 ➀ 5.0 ➃ 1.8 MAX. 0.4 1.27 ➄➅➆➇ ➀ ➁ ➂ EMITTER ➃ GATE ➄ ➅ ➆ ➇ COLLECTOR ➀➁➂ ➃ G VCES ............................................................................... 400V G ICM ................................................................................... 150A G Drive voltage ..................................................................... 4V SOP-8 APPLICATION Strobe flasher for Camera MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature VGE = 0V VCE = 0V VCE = 0V, tw = 10s Conditions Ratings 400 ±6 ±8 150 –40 ~ +150 –40 ~ +150 Unit V V V A °C °C Sep. 2001 CM = 400µF see figure1 www.DataSheet4U.com MITSUBISHI IGBT CY25AAJ-8 Nch IGBT for STROBE FLASHER ELECTRICAL CHARACTERISTICS Symbol V (BR) CES ICES IGES VGE (th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 1.5 Unit V µA µA V Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Figure1. MAXIMUM PULSE COLLECTOR CURRENT PULSE COLLECTOR CURRENT ICM (A) 160 120 CM = 400µF 80 40 0 0 2 4 6 8 GATE-EMITTER VOLTAGE VGE (V) APPLICATION EXAMPLE TRIGGER SIGNAL Vtrig IXe CM + Vtrig IGBTE GATE VG VOLTAGE – VCM RG VCE Xe TUBE CURRENT IXE VG IGBT Recommended operation conditions Maximum operation conditions VCM = 350V VCM = 330V ICP = 130A ICP = 150A CM = 400µF CM = 330µF VGE = 5V Notice 1. Gate drive voltage during on-state must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 0.1A. (In general, when RG (off) = 30Ω, it is satisfied.) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to give static electricity. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 150A : full luminescence condition) of main condenser (CM = 400µF). Repetitive period under the full luminescence conditions is over 3 seconds. Notice 4. Total gate operation time must be applied within 5,000 hours. Sep. 2001