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5Ordering number : ENN7453
CPH6526
PNP/NPN Epitaxial Planar Silicon Composite Transistors
CPH6526
Low-Frequency General-Purpose Amplifier Applications
Features
•
Package Dimensions
unit : mm 2187
[CPH6526]
6 5 4
0.6 0.2
•
Composite type with 2 transistors contained in the CPH package currently in use, improving the mounting efficiency greatly. The CPH6526 is formed with two chips, being equivalent to the 2SA1622 / 2SC4211, placed in one package.
2.9
0.15
0.05
1.6 2.8
1
2
0.4
Specifications
( ) : PNP Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg 1unit Conditions
0.7 0.9
0.2
3 0.95
0.6
1 : Emitter1 2 : Base1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Collector1 SANYO : CPH6
Ratings (--)55 (--)50 (--)6 (--)150 (--)300 (--)30 350 500 150 --55 to +150
Unit V V V mA mA mA mW mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=(--)35V, IE=0 VEB=(--)4V, IC=0 VCE=(--)6V, IC=(--)1mA Ratings min typ max (--)0.1 (--)0.1 160 600 Unit µA µA
Marking : 3R
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM TA-100414 No.7453-1/5
CPH6526
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=(--)6V, IC=(-)10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(-)10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-)55 (-)50 (--)6 0.15 (0.60)0.75 0.20 Ratings min typ (180)200 (2.9)1.7 (--0.11)0.08 (-)0.8 (--)0.4 (--)1.0 max Unit MHz pF V V V V V µs µs µs
Note : The specifications shown above are for each individual transistor.
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 220µF VBE= --5V + 470µF VCC=20V RB
Electrical Connection
6
RL=2kΩ
5
4
TR2 TR1
TR1=PNP TR2=NPN
2 3
(Top view)
1
IC=10IB1= --10IB2=10mA For PNP, the polarity is reversed.
--50
IC -- VCE
A 0µA A 0µ 0µ -40 --35 5 --4
--3 00µA
[TR1]
50
IC -- VCE
A
40 0µ A
--250µA
[TR2] 350µA 300µA
Collector Current, IC -- mA
0µ A
--30
--5 0
--150µA
--100µA
30
500µA
--200µA
Collector Current, IC -- mA
--40
40
450µ
250µA
200µA
150µA
100µA
--20
20
--10
--50µA
10
50µA IB=0
0 0.2 0.4 0.6 0.8 1.0 IT04699
0 0 --0.2 --0.4 --0.6 --0.8
IB=0
--1.0 IT04700
0
Collector-to-Emitter Voltage, VCE -- V
--14
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
12
[TR1]
IC -- VCE
[TR2]
--12
Collector Current, IC -- mA
--10
Collector Current, IC -- mA
--8
A --50µ --45µA --40µA --35µA --30µA --25µA
--20µA --15µA
10
8
6
50µA 45µA 40µA 35µA 30µA
25µA
20µA
--6
4
--4
15µA
2
--10µA
--2 0 0 --10 --20 --30 --40
10µA 5µA IB=0
0 10 20 30 40 50 IT04701
--5µA IB=0
--50 IT04702
0
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.7453-2/5
CPH6526
--160 --140
IC -- VBE
[TR1] VCE= --6V Collector Current, IC -- mA
160 140 120 100 80 60 40 20 0
IC -- VBE
[TR2] VCE=6V
Collector Current, IC -- mA
--120 --100 --80
--40 --20 0 0 --0.2 --0.4
Ta=75°C 25°C --25°C
--60
--0.6
--0.8
--1.0
--1.2
--1.4
0
0.2
0.4
0.6
Ta=75°C 25°C --25°C
0.8 1.0
1.2
1.4 IT04703
Base-to-Emitter Voltage, VBE -- V
1000 7 5
IT04704 1000 7 5
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
[TR1] VCE= --6V
hFE -- IC
[TR2] VCE=6V
DC Current Gain, hFE
3 2
Ta=75°C
25°C
DC Current Gain, hFE
3 2
--25°C
Ta=75°C 25°C --25°C
100 7 5 3 --0.1
100 7 5 3 0.1
2
3
5
--1.0
2
3
5
--10
2
3
5
Collector Current, IC -- mA
1000
--100 2 3 IT04706
2
3
5
1.0
2
3
5
10
2
3
5
f T -- IC
Collector Current, IC -- mA
1000
2 100 IT04705
[TR1] VCE= --6V Gain-Bandwidth Product, f T -- MHz
fT -- IC
[TR2] VCE=6V
Gain-Bandwidth Product, f T -- MHz
7 5 3 2
7 5 3 2
100 7 5 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 IT04708
100 7 5 3 2 1.0 2 3 5 7 2 3 5 7 100 2 IT04707
10
Collector Current, IC -- mA
2
Cib -- VEB
Collector Current, IC -- mA
2
[TR1] f=1MHz Input Capacitance, Cib -- pF
Cib -- VEB
[TR2] f=1MHz
Input Capacitance, Cib -- pF
10 7 5
10 7 5
3
3
2
2
1.0 5 7 --1.0 2 3 5 7 IT04710
1.0 5 7 1.0 2 3 5 7 IT04709
Emitter-to-Base Voltage, VEB -- V
Emitter-to-Base Voltage, VEB -- V
No.7453-3/5
CPH6526
2
Cob -- VCB
[TR1] f=1MHz
5 3
Cob -- VCB
[TR2] f=1MHz
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT04712
10 7 5 3 2
2
10 7 5 3 2
1.0 7 5 3
1.0 7 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT04711
Collector-to-Base Voltage, VCB -- V
--1.0 7
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
1.0 7
[TR1] IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
VCE(sat) -- IC
[TR2] IC / IB=10
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
5 3 2
--0.1 7 5 3 2
7 Ta=
25°C
5°C
0.1 7 5 3 2 0.01 1.0
--25
°C
C 75° Ta= °C --25
25°C
--0.01 --1.0
2
3
5
7 --10
2
3
5
7 --100
2
3
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
3
IT04714
VBE(sat) -- IC
Collector Current, IC -- mA
3
IT04713
[TR1] IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
[TR2] IC / IB=10
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
2
--1.0
25°C
1.0
25°C
Ta= --25°C
7
Ta= --25°C
7
75°C
5
75°C
5
3 --1.0
2
3
5
7 --10
2
3
5
Collector Current, IC -- mA
5 3 2
7 --100 2 IT04716
3 1.0
2
3
5
7
10
2
3
5
ASO
Collector Current, IC -- mA
600
7 100 2 IT04715
[TR1 / TR2] 50µs Collector Dissipation, PC -- mW
PC -- Ta
[TR1 / TR2]
ICP=0.3A IC=0.15A
Collector Current, IC -- A
0.1 7 5 3 2 0.01 7 5 3 2
10
DC
1m
s
100µs
500
m
10
Op era tio n
s
0m
s
400 350 300
To t
al
Di
ss
200
1u
ip
nit
ati
on
100
0.001 1.0
Single pulse Ta=25°C
2 3 5 7 10 2 3 5
0 100 IT05412 7 0 25 50 75 100 125 150 175 IT05368
Collector-to -Emitter Voltage, VCE -- V
Ambient Temperature, Ta -- °C
No.7453-4/5
CPH6526
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice.
PS No.7453-5/5
