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MITSUBISHI
MITSUBISHI

CP25TD1-24A Datasheet

IGBT MODULE


CP25TD1-24A Datasheet Preview


APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP25TD1-24A
Pre. S.Kou, M.Seo
Rev.
Apr. T.Igarashi May 7, 2005
LOW POWERwwSwW.DIaTtCaSHhIeNeGt4UU.cSomE
TRANSFER MOLD TYPE,INSULATED TYPE
TENTATIVE
”,C..........................................25A
”9CES...................................1200V
”Insulated Type
”',3-CIB Module
-,QYHUWHU-&RQYHUWHU%UDNH
APPLICATION
AC & DC motor controls, General purpose inverters
MAXIMUM RATINGS (Tj=25° C, unless otherwise noted)
Inverter Part
Symbol
Parameter
VCES
VGES
IC
ICM
PC
IE (Note2)
IEM (Note2)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
Brake Part
Symbol
VCES
VGES
IC
ICM
PC (Note4)
VRRM
IFM (Note4)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Converter Part
Symbol
Parameter
VRRM
Ea
IO
IFSM
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge forward current
I2t I2t for fusing
Condition
G-E Short
C-E Short
DC, Tc=86° C
(Note 1)
Pulse
(Note 3)
Tc=25° C
DC, Tc=30° C
(Note 1)
Pulse
(Note 3)
Condition
G-E Short
C-E Short
DC, Tc=100° C (Note 1)
Pulse
(Note 3)
Tc=25° C
Clamp diode part
Clamp diode part
Condition
3- rectifying circuit
1/2cycle at 60Hz,Peak value
Non-repetitive
Value for 1cycle of surge current
TSM-1820
Rating
1200
±20
25
50
(138)
25
50
Units
V
V
A
A
W
A
A
Rating
1200
±20
15
30
(113)
1200
15
Units
V
V
A
A
W
V
A
Rating
1600
440
25
(250)
(260)
Units
V
V
A
A
A2s
1-6
Page 1

APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP25TD1-24A
LOW POWERwwSwW.DIaTtCaSHhIeNeGt4UU.cSomE
TRANSFER MOLD TYPE,INSULATED TYPE
Common Rating
Symbol
Parameter
Tj junction temperature (Note 5)
Tstg Storage temperature
Viso Isolation voltage
- Mounting torque
- Weight
Condition
Inverter, brake, converter part
60Hz, Sinusoidal AC 1 min.
Applied between pins and heat-sink
Screw: M4 Recommended: 1.18N· m
Typical value
Rating
-20 J 125
-20 J 125
2500
(0.98J1.47)
52
Units
°C
°C
Vrms
N· m
g
ELECTRICAL CHARACTERISTICS (Tj=25° C, unless otherwise noted)
Inverter Part
Symbol
Parameter
Conditions
ICES
VGE(th)
IGES
VCE(sat)
Collector cutoff current
Gate emitter threshold voltage
Gate emitter cutoff current
Collector emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
VECS (Note1)
trrS (Note1)
QrrS (Note1)
Rth(j-c)Q
Rth(j-c)R
Rg
Input capacitance
Output Capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
External gate resistance
VCE=VCES, VGE=0V
IC=2.5mA, VCE=10V
VGE=20V, VCE=0V
IC=25A
Tj=25° C
VGE=15V (Note6) Tj=125° C
VCE=10V, VGE=0V
f=1MHz
VCC=600V,IC=25A,VGE=15V
VCC=600V, IC=25A
VGE=15V, RG=13
Tj=25° C
Inductive load
IE=25A,VGE=0V
VCC=600V, IC=25A, VGE=0V
RG=13 , Tj=25° C
IGBT part, per 1/6 module
FWDi part, per 1/6 module
Characteristics
Min. Typ. Max.
ùù
1
6.5 7.5 8.5
ùù
1
ù 1.8 (2.5)
ù 2.0 ù
ù ù (4.94)
ù ù (0.34)
ù ù (0.10)
ù (167) ù
ù ù 100
ù ù 75
ù ù 300
ù ù 400
ù 3.2 4.4
ù 200 ù
ù 0.5 ù
ù ù (0.9)
ù ù (1.5)
13 ù 130
Units
mA
V
A
V
nF
nC
ns
V
ns
C
° C/W
TSM-1820
2-6
Page 2

APPLICATION NOTE
MITSUBISHI<IGBT MODULE>
CP25TD1-24A
LOW POWERwwSwW.DIaTtCaSHhIeNeGt4UU.cSomE
TRANSFER MOLD TYPE,INSULATED TYPE
Brake Part
Symbol
Parameter
ICES
VGE(th)
IGES
VCE(sat)
Collector cutoff current
Gate emitter threshold voltage
Gate emitter cutoff current
Collector emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
Tr
td(off)
Tf
VFM
Trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rg
Input capacitance
Output Capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance
External gate resistance
Converter Diode Part
Symbol
Parameter
IRRM
VFM
Rth(j-c)
Repetitive reverse current
Forward voltage drop
Thermal resistance
NTC Thermistor Part
Symbol
Parameter
RTH
B(25/100)
Resistance
B Constant
Conditions
VCE=VCES, VGE=0V
IC=1.5mA, VCE=10V
VGE=20V, VCE=0V
IC=15A
Tj=25° C
VGE=15V (Note6) Tj=125° C
VCE=25V, VGE=0V
f=1MHz
VCC=600V,IC=15A,VGE=15V
VCC=600V, IC=15A
VGE=15V, RG=22
Tj=25° C
Inductive load
IF=15A,Clamp diode part
VCC=600V, IC=15A, VGE=15V,
RG=22 , Tj=25° C
IGBT part
FWDi part
Characteristics
Min. Typ. Max.
ùù
1
6.5 7.5 8.5
ùù
1
ù 1.8 (2.5)
ù 2.0 ù
ù ù (3.14)
ù ù (0.22)
ù ù (0.06)
ù (100) ù
ù ù 100
ù ù 75
ù ù 300
ù ù 400
ù 2.7 3.5
ù 200 ù
ù 0.3 ù
ù ù (1.1)
ù ù (1.4)
22 ù 220
Units
mA
V
A
V
nF
nC
ns
V
ns
C
° C/W
Conditions
VR=VRRM, Tj=125° C
IF=25A
Per 1/6 module
Characteristics
Min. Typ. Max.
ù ù (1.0)
ù 1.7 2.1
ù ù (1.0)
Units
mA
V
° C/W
Conditions
Tc=25° C
Resistance at 25° C,100Ð
(Note 7)
Characteristics
Min. Typ. Max.
(9.5) 10.0 (10.5)
ù 3450 ù
Units
k
K
Common Rating
Symbol
Parameter
Rth(c-f) Contact thermal resistance
Conditions
Case to fin,thermal compound
applied (1module)
Characteristics
Min. Typ. Max.
ùùù
Units
° C/W
Note1 Tc is measured at the position just underneath the power chip.
Note2 IE, VEC, trr, and Qrr represent characteristics of the anti-paralleled emitter to collector free-wheel diode(FWDi).
Note3.Pulse width and repetition rate should be such that the device junction temp.(Tj) does not exceed Tjmax rating.
Note4 Junction temperature(Tj) should not increase beyond 150° C
Note5 The maximum junction temperature rating of the power chips integrated inside DIP-CIB is 150° C. However, to e
nsure safe operation of DIP-CIB, the average junction temperature should be limited to below 125° C.
Note6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note7 B = (InR1-InR2)/(1/T1-1/T2) where R1 is the resistance at T1(K), R2 the resistance at T2(K)
TSM-1820
3-6
Page 3
Part Number CP25TD1-24A
Manufactur MITSUBISHI
Description IGBT MODULE
Total Page 6 Pages
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