GaAs MMIC Low Noise Amplifier

2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD Chip Device Layout Features Self Bias Architecture On-Chip Drain Bias Coil/DC Blocking 9.0 dB Small Signal Gain 4.5 dB Noise Figure +19.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC distributed low noise amplifier has a small signal gain of 9.0 dB with a noise figure of 4.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via www.DataSheet4U.com holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +8.5 VDC 175 mA +20 dBm -65 to +165 OC -55 to MTTF Table 1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) Output Second Order Intercept Point (OIP2) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd) Supply Current (Id) (Vd=5.0V) Units GHz dB dB dB dB dB dB dBm dBm dBm VDC mA Min. 2.0 +4.5 100 Typ. 12.0 15.0 9.0 +/-0.5 20.0 4.5 +19.0 +39.0 +29.0 +5.0 115 Max. 18.0 +7.0 130 100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant with an 80% pass rate required. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 7 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD Low Noise Amplifier Measurements CMM4000 Vd=5.0 V Id=110 mA 13 12 11 CMM4000 Vd=5.0 V, Id=110 mA 7 6 Noise Figure (dB) 5 4 3 2 1 0 10 Gain (dB) 9 8 7 6 5 4 3 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 Frequency (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) CMM4000 Vd=5.0 V Id=110 mA 5 0 -5 -10 -15 -20 -25 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 Frequency (GHz) Output Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 0.0 2.0 4.0 6.0 CMM4000 Vd=5.0 V Id=110 mA Input Return Loss (dB) 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 Frequency (GHz) CMM4000 Id=110 mA 24 22 Output Power P1dB (dBm) 20 18 16 14 12 10 8 6 4 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) P1dB_5V P1dB_6V P1dB_7V PAE_5V PAE_6V PAE_7V 50 45 Power Added Efficiency (%) OIP3/OIP2 (dBm) 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 2.0 3.0 4.0 5.0 6.0 CMM4000 Vd=5.0 V Id=100 mA 40 35 30 25 20 15 10 5 0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) OIP3 OIP2 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 7 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD Low Noise Amplifier Measurements (cont,) CMM4000 Vd=5.0 V Id=100 mA 12 11 10 9 8 7 6 5 4 3 2 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) +25 deg C +125 deg C -55 deg C +25 deg C 24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 15.0 14.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Frequency (GHz) +125 deg C -55 deg C CMM4000 Vd=5.0 V, Id=100 mA Output Power P1dB (dBm) Small Signal Gain (dB) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 7 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD S-Parameters Typical S-Parameter Data for CMM4000 Vd=5.0 V Id=110 m A Frequency (GHz) 0.1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 S11 (Mag) 0.939 0.364 0.296 0.286 0.292 0.315 0.320 0.290 0.266 0.228 0.181 0.144 0.139 0.171 0.194 0.190 0.159 0.120 0.148 0.191 0.103 0.305 0.623 0.768 0.840 0.878 0.908 0.927 0.939 0.941 0.946 S11 (Ang) -28.86 -132.15 -154.45 -160.46 -165.78 -170.64 -179.10 174.17 167.95 162.72 161.86 170.52 -173.68 -168.09 -177.47 164.69 135.47 77.24 0.06 -50.22 -69.38 -2.05 -38.06 -63.85 -81.23 -93.97 -103.83 -112.29 -119.49 -125.43 -130.57 S21 (Mag) 0.030 1.904 2.668 2.828 2.828 2.797 2.736 2.741 2.740 2.762 2.806 2.862 2.911 2.934 2.900 2.814 2.816 2.903 2.899 2.832 2.720 2.171 1.302 0.764 0.475 0.303 0.197 0.147 0.148 0.158 0.155 S21 (Ang) 117.39 -171.74 -105.50 -70.66 -44.41 -22.20 -1.45 16.88 35.36 53.73 72.32 91.58 111.73 132.75 154.42 175.34 -164.76 -141.37 -115.02 -86.80 -53.34 -11.92 21.15 40.26 52.76 60.92 61.87 53.60 48.15 55.22 69.84 S12 (Mag) 0.000 0.005 0.010 0.018 0.022 0.026 0.030 0.036 0.040 0.045 0.050 0.056 0.062 0.068 0.072 0.075 0.080 0.087 0.092 0.095 0.096 0.080 0.048 0.029 0.017 0.010 0.006 0.005 0.007 0.007 0.008 S12 (Ang) 133.12 -60.12 -5.71 18.16 44.37 64.72 76.12 97.10 112.34 127.57 143.05 159.35 176.77 -164.72 -145.03 -126.55 -108.43 -87.59 -63.43 -37.36 -5.72 34.73 66.50 85.11 92.79 100.58 93.67 60.51 51.59 68.77 84.14 S22 (Mag) 0.983 0.534 0.229 0.160 0.185 0.209 0.225 0.225 0.212 0.188 0.153 0.108 0.056 0.014 0.068 0.112 0.099 0.077 0.106 0.113 0.089 0.166 0.241 0.254 0.243 0.227 0.209 0.201 0.204 0.219 0.238 S22 (Ang) 118.74 -87.11 -64.48 -81.40 -91.05 -89.28 -84.50 -74.33 -65.50 -56.22 -46.48 -37.11 -30.81 -113.48 -151.52 -133.14 -114.04 -134.21 -143.64 -137.82 -152.93 -175.57 -156.77 -141.68 -132.25 -127.37 -126.41 -128.78 -132.36 -134.50 -132.64 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD 1.414 (0.056) Mechanical Drawing 1.000 (0.039) 2 3 0.348 (0.014) 0.539 (0.021) 1 6 5 4 0.0 1.555 1.795 (0.061) (0.071) 1.675 1.890 (0.066) (0.074) (Note: Engineering designator is M393) 0.0 Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.076 +/- 0.010 (0.003 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.080 x 0.080 (0.003 x 0.003). All RF Bond Pads are 0.180 x 0.080 (0.007 x 0.003). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.172 mg Bond Pad #1 (RF In) Bond Pad #2 (Vd) Bond Pad #3 (RF Out) Bond Pad #4 (Rs-8.5 ) Bond Pad #5 (Rs-12 ) Bond Pad #6 (Rs-13 ) Bias Arrangement Vd Bypass Capacitors - See App Note [2] 2 3 RF Out RF In 1 6 5 4 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 7 Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier July 2006 - Rev 06-Jul-06 CMM4000-BD App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd=5V, I=115mA. Additionally there are three source resistors on chip, 13, 12 and 8.5 Ohms. One of these must be bonded to ground. Typically 12 Ohms is bonded to ground to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow additional performance adjustment. App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Table (TBD) (Thermal Resistance (Rth) is 82ºC/W) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 de