GaAs MMIC Low Noise Amplifier

2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD Chip Device Layout Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 16.0 dB with a noise figure of 2.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold www.DataSheet4U.com metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 110 mA +20 dBm -65 to +165 OC -55 to MTTF Table 1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1 dB Compression (P1dB) Output Second Order Intercept Point (OIP2) Output Third Order Intercept Point (OIP3) Drain Bias Voltage (Vd1,2) Supply Current (Id) (Vd1,2=8.0V) Units GHz dB dB dB dB dB dB dBm dBm dBm VDC mA Min. 2.0 Typ. 9.0 10.0 16.0 +/-1.0 30.0 2.5 +13.0 +31.0 +22.0 +8.0 70 Max. 18.0 +8.5 90 100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant with an 80% pass rate required. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD Low Noise Amplifier Measurements CMM1110 Vd=8.0 V Id=70 mA 18 17 16 15 Gain (dB) 14 13 12 11 10 9 8 0 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) S21 S11 S22 25 20 15 10 5 0 -5 -10 -15 -20 -25 Input/Output Return Loss (dB) 5.0 4.5 4.0 3.5 Noise Figure (dB) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) CMM1110 Vd=8.0 V Id=70 mA CMM1110 Vd=8.0 V Id=70 mA 18 17 16 Output Power P1dB (dBm) Output Power Psat (dBm) 15 14 13 12 11 10 9 8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) 20 19 18 17 16 15 14 13 12 11 10 1 2 3 4 5 CMM1110 Vd=8.0V Id=70 mA 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD Low Noise Amplifier Measurements (cont.) CMM1110 Vd=8.0 V Id=70 mA 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 0 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) 88degC -45degC 25degC CMM1110 Vd=8.0 V Id=70 mA 19 18 17 Output Power P1dB (dBm) 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency (GHz) +85C -40C +25C CMM1110 Vd=8.0 V Id=70 mA 10 8 6 4 Input Return Loss (dB) 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 2 4 6 8 10 12 14 16 18 20 22 Frequency (GHz) 88degC -45degC 25degC Output Return Loss (dB) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 0 2 4 CMM1110 Vd=8.0 V Id=70 mA 6 8 10 12 14 16 18 20 22 Frequency (GHz) 88degC -45degC 25degC Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD S-Parameters Typical S-Parameter Data for CMM1110 Vd=8.0 V Id=70 m A Frequency (GHz) 0.1 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 S11 (Mag) 0.997 0.906 0.492 0.145 0.199 0.270 0.317 0.342 0.349 0.345 0.332 0.319 0.304 0.289 0.273 0.258 0.225 0.181 0.162 0.217 0.321 0.510 0.746 0.873 0.905 0.911 0.898 0.860 0.896 0.910 0.912 0.921 S11 (Ang) -17.15 -90.42 102.37 -47.14 -63.22 -85.42 -105.34 -122.00 -135.78 -147.36 -156.91 -164.69 -172.07 -179.76 170.53 157.12 134.24 94.45 40.64 -2.51 -25.79 -41.55 -66.30 -90.28 -108.19 -121.78 -132.62 -138.73 -144.55 -151.12 -156.95 -162.26 S21 (Mag) 0.001 0.103 6.952 6.861 6.453 6.167 5.928 5.771 5.690 5.703 5.739 5.788 5.798 5.777 5.757 5.820 5.923 6.006 6.097 5.883 5.293 4.307 2.832 1.562 0.827 0.450 0.250 0.149 0.097 0.066 0.040 0.022 S21 (Ang) -114.78 36.33 -179.41 28.61 -32.19 -76.77 -114.26 -147.92 -179.65 149.56 118.77 87.98 56.72 25.61 -4.90 -36.22 -68.90 -103.58 -141.30 176.61 132.20 83.26 33.61 -6.84 -37.04 -60.61 -78.36 -90.32 -103.13 -123.11 -138.03 -155.11 S12 (Mag) 0.000 0.003 0.005 0.016 0.018 0.018 0.019 0.019 0.020 0.020 0.021 0.023 0.024 0.025 0.027 0.027 0.030 0.033 0.038 0.041 0.043 0.043 0.034 0.022 0.014 0.008 0.004 0.006 0.007 0.005 0.004 0.005 S12 (Ang) -2.60 -145.29 113.10 49.95 17.23 -3.67 -19.66 -33.14 -45.25 -56.83 -67.52 -80.40 -92.40 -105.35 -118.26 -131.84 -144.59 -158.59 -176.87 160.70 136.30 106.92 72.39 47.32 27.92 24.21 39.39 81.72 51.61 69.19 59.81 72.46 S22 (Mag) 0.901 0.569 0.325 0.260 0.268 0.298 0.331 0.364 0.391 0.405 0.404 0.381 0.338 0.282 0.223 0.170 0.170 0.213 0.246 0.275 0.313 0.405 0.478 0.461 0.405 0.332 0.277 0.215 0.174 0.130 0.102 0.098 S22 (Ang) -25.83 -66.48 -145.18 -167.45 168.55 147.47 127.77 109.00 90.67 73.00 55.71 39.29 25.05 14.08 8.05 14.22 28.25 33.40 29.74 25.57 23.02 14.73 -6.57 -29.63 -46.68 -62.86 -77.72 -91.15 -108.96 -139.57 171.38 104.62 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD 0.091 (0.036) 0.949 (0.037) 1.908 (0.075) Mechanical Drawing 1.100 (0.043) 1.009 (0.040) 2 3 4 0.520 (0.021) 1 5 0.520 (0.021) 0.0 0.0 14 13 12 11 0.660 0.869 (0.026) (0.034) 0.759 0.979 (0.030) (0.039) 10 9876 1.688 1.908 (0.067) (0.075) 1.383 1.600 1.798 2.000 (0.054) (0.063)(0.071) (0.079) (Note: Engineering designator is M420) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.080 x 0.080 (0.003 x 0.003). All RF Bond Pads are 0.180 x 0.080 (0.007 x 0.003). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.364 mg Bond Pad #1 (RF In) Bond Pad #2 (Vg1) Bond Pad #3 (Vd1) Bond Pad #4 (Vd2) Bond Pad #5 (RF Out) Bond Pad #6 (Rs2-32 ) Bond Pad #7 (Rs2-20.0 ) Bond Pad #8 (Rs2-15 ) Bond Pad #9 (Rs2 - Off Chip) Bond Pad #10 (Vg2) Bond Pad #11 (Rs1-32 ) Bond Pad #12 (Rs1-20 ) Bond Pad #13 (Rs1-15 ) Bond Pad #14 (Rs1 - Off Chip) Bias Arrangement Vd1,2 Bypass Capacitors - See App Note [2] 2 3 4 RF In 1 5 RF Out 14 13 12 11 10 9876 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 7 Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. Bias is nominally Vd1,2=8V, ITOTAL=70mA. Additionally there are six total source resistors on chip. The three resistors on the input stage are 15, 20 and 32 Ohms. The three resistors on the output stage are 15, 20 and 32 Ohms. One of these must be bonded to ground for each amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow additional performance adjustment. App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended