HIGH POWER SWITCHING USE

www.DataSheet4U.com MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE CM900DU-24NF q IC ................................................................... 900A q VCES ......................................................... 1200V q Insulated Type q 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T. Mfg. Co. Ltd) A : VHR-2N B : VHR-5N Tc measured point (The side of Cu base plate) 150 137.5±0.25 42 14 14 Tc measured point (The side of Cu 12 2 base plate) 21 11 19 38±0.25 42.5±0.25 38±0.25 74±0.25 74±0.25 34.6 +1.0 –0.5 4 15.7 A G1 E1 G2 E2 C1 8-f6.5 MOUNTING HOLES PPS E2 C1 10.5 B 15.7 5.5 18 129.5 166 9-M6 NUTS 12 14 14 14 14 14 14 42 42 25.1 L A B E L C2 C2E1 E2 C1 C1 CIRCUIT DIAGRAM G1 E1 E2 G2 C2E1 C2 1.9 ±0.2 34.6 +1.0 –0.5 Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 900 1800 900 1800 2550 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 1400 Unit V V A A W °C °C V N•m N•m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) R(lead) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current Test conditions VCE = VCES, VGE = 0V Min. — 6 — — — — — — — — — — — — — — — — — — — — 0.35 Limits Typ. — 7 — 1.8 2.0 0.143 — — — 4800 — — — — — 50 — — — 0.016 — — — Max. 1 8 0.5 2.5 — — 140 16 3 — 600 200 800 300 500 — 3.4 0.049 0.078 — 0.021*3 0.034*3 2.2 Unit mA V µA V mΩ nF nC Gate-emitter threshold voltage IC = 90mA, VCE = 10V Gate leakage current Collector-emitter saturation voltage Module lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 VGE = VCES, VCE = 0V Tj = 25°C IC = 900A, VGE = 15V Tj = 125°C Ic = 900A, terminal-chip VCE = 10V VGE = 0V VCC = 600V, IC = 900A, VGE = 15V VCC = 600V, IC = 900A VGE1 = VGE2 = 15V RG = 0.35Ω, Inductive load switching operation IE = 900A IE = 900A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips (IGBT part) Tc measured point is just under the chips (FWDi part) ns ns µC V Contact thermal resistance Thermal resistance External gate resistance °C/W Ω Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar. 2003 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1800 VGE = 20V 15V 13V Tj = 25°C 12V 1800 VCE = 10V 1600 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 1600 1400 1200 1000 800 600 400 200 0 0 2 COLLECTOR CURRENT (A) 1400 1200 1000 800 600 400 200 0 0 4 8 12 Tj = 25°C Tj = 125°C 16 20 11V 10V 8V 4 6 8 9V 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25°C 4 8 3 6 IC = 900A 4 IC = 1800A 2 IC = 360A 0 6 8 10 12 14 16 18 20 2 1 Tj = 25°C Tj = 125°C 0 0 200 400 600 800 1000 1200 1400 1600 1800 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) 104 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 102 Cies 103 7 5 3 2 101 Coes 100 Cres Tj = 25°C Tj = 125°C 0 1 2 3 4 102 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 td(off) tf td(on) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 SWITCHING TIMES (ns) 3 2 Irr 3 2 trr 102 7 5 3 2 102 VCC = 600V 3 VGE = ±15V tr RG = 0.35Ω 2 Tj = 125°C Inductive load 101 1 10 2 3 5 7 102 7 Conditions: 5 2 3 5 7 103 101 1 10 Conditions: VCC = 600V VGE = ±15V RG = 1Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) EMITTER CURRENT IE (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.049°C/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.078°C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 900A 16 VCC = 400V VCC = 600V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 Single Pulse TC = 25°C 10–2 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) 0 0 1000 2000 3000 4000 5000 6000 7000 GATE CHARGE QG (nC) IC-ESW (TYPICAL) 103 7 5 3 2 Conditions: VCC = 600V VGE = ±15V Tj = 125°C 102 RG = 0.35Ω 7 Inductive load 5 3 Esw(off) 2 101 7 5 3 2 100 1 10 2 3 Esw(on) 103 7 5 3 2 RG-ESW (TYPICAL) Esw(off) Esw(on) Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive load 0 0.5 1 1.5 RG (Ω) Mar. 2003 ESW (mJ/pulse) ESW (mJ/pulse) 5 7 103 102 7 5 3 2 101 7 5 3 2 100 5 7 102 IC (A) 2 3 2 2.5 MITSUBISHI IGBT MODULES CM900DU-24NF HIGH POWER SWITCHING USE IC-Err (TYPICAL) 102 7 5 3 Err (mJ/pulse) RG-Err (TYPICAL) 103 7 5 3 2 Err (mJ/pulse) 2 Err 101 7 5 3 2 Conditions: VCC = 600V VGE = ±15V Tj = 125°C RG = 0.35Ω Inductive load 2 3 5 7 102 IE (A) 2 3 5 7 103 102 7 5 3 2 101 7 5 3 2 100 0 0.5 1 Err 100 1 10 Conditions: VCC = 600V VGE = ±15V Tj = 125°C IC = 900A Inductive load 1.5 RG (Ω) 2 2.5 Mar. 2003