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www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-element in a Pack (for brake) q AISiC Baseplate APPLICATION Traction drives, DC choppers, Dynamic braking choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.1 190 ±0.5 171 ±0.1 57 ±0.1 57 ±0.1 6 - M8 NUTS C 20 –0.2 +0.1 C C K (C) G E 124 ±0.1 140 ±0.5 40 ±0.2 E E A (E) C C C CM E E E CIRCUIT DIAGRAM C E G 20.25 ±0.2 41.25 ±0.3 3 - M4 NUTS 79.4 ±0.3 61.5 ±0.3 61.5 ±0.3 13 ±0.2 5 ±0.15 38 +1 0 screwing depth min. 16.5 8 - φ7 ±0.1 MOUNTING HOLES 15 ±0.2 40 ±0.3 5.2 ±0.2 29.5 ±0.5 screwing depth min. 7.7 28 +1 0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 100°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 800 1600 800 1600 9600 –40 ~ +150 –40 ~ +125 –40 ~ +125 6000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 80mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 125°C VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 800A, VGE = ±15V RG(off) = 2.5Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 800A, VGE = ±15V RG(on) = 2.5Ω, Tj = 125°C, Ls = 100nH Inductive load IF = 800A, VGE = 0V, Tj = 25°C IF = 800A, VGE = 0V, Tj = 125°C VCC = 1650V, IC = 800A, VGE = ±15V di/dt = 2600A/µs, Tj = 125°C, Ls = 100nH Inductive load Min — 5.0 — — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.30 3.60 120 12.0 3.6 5.7 2.80 2.70 — — 1.10 — — 1.05 — 540 0.60 2.80 2.70 — 540 0.60 Max 10 7.0 0.5 4.20 — — — — — 3.60 — 1.60 1.00 — 2.50 1.00 — 1.4 — — 3.60 — 1.4 — — Unit mA V µA V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse V µs µC J/pulse (Note 4) (Note 4) V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy (Note 4) (Note 4) VF (Note 5) Forward voltage trr (Note 5) Reverse recovery time Qrr (Note 5) Reverse recovery charge Erec (Note 5) Reverse recovery energy Note 1. 2. 3. 4. 5. (Note 4) (Note 4) Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. The symbols represent characteristics of the clamp diode (Clamp-Di). HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Contact thermal resistance Item Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to Fin, λgrease = 1W/m·K Min — — — — Limits Typ — — — 8.0 Max 13.0 25.0 25.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 19.5 32.0 — — — — Limits Typ — — — 1.5 — — — 18 24 0.20 0.30 Max 13.0 6.0 2.0 — — — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part Clamp-Di part TC = 25°C, IGBT part TC = 25°C, Clamp-Di part HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj = 125°C 1400 1400 1600 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V COLLECTOR CURRENT (A) VGE = 15V 1000 800 VGE = 12V COLLECTOR CURRENT (A) 1200 VGE = 20V 1200 1000 800 600 400 200 0 VGE = 10V 600 400 VGE = 8V 200 0 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 6 VGE = 15V 5 EMITTER-COLLECTOR VOLTAGE (V) 5 4 4 3 3 2 2 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 1650V, IC = 800A Tj = 25°C GATE-EMITTER VOLTAGE (V) 16 VGE = 0V, Tj = 25°C f = 100kHz Cies CAPACITANCE (nF) 102 7 5 3 2 12 8 101 7 5 3 2 Coes 4 Cres 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 2 4 GATE CHARGE (µC) 6 8 COLLECTOR-EMITTER VOLTAGE (V) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.5 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 2.5Ω Tj = 125°C, Inductive load 4 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 800A VGE = ±15V Tj = 125°C, Inductive load SWITCHING ENERGIES (J/pulse) Eon 3 SWITCHING ENERGIES (J/pulse) 2 Eon 1.5 Eoff 1 Erec 0.5 2 Eoff 1 Erec 0 0 400 800 1200 1600 0 0 5 10 15 20 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY TIME (µs) 3 2 3 2 101 7 5 3 2 101 7 5 3 2 103 lrr 7 5 3 2 td(off) td(on) tr tf 100 7 5 3 2 100 7 5 3 2 102 trr 7 5 3 2 5 7 102 5 7 103 5 7 104 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10-1 1 10 101 2 3 2 3 2 3 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Single Pulse, TC = 25°C Rth(j–c)Q = 13K/kW Rth(j–c)R = 25K/kW 1.0 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 REVERSE RECOVERY CURRENT (A) VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 2.5Ω Tj = 125°C, Inductive load VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 2.5Ω Tj = 125°C, Inductive load 104 7 5 SWITCHING TIMES (µs) MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA (RBSOA) 2500 VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 2.5Ω 2500 FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC ≤ 2200V, di/dt ≤ 3600A/µs Tj = 125°C 2000 REVERSE RECOVERY CURRENT (A) 0 1000 2000 3000 4000 2000 COLLECTOR CURRENT (A) 1500 1500 1000 1000 500 500 0 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005

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CM800E6C-66H

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