2nd-Version HVIGBT Modules

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H q IC ................................................................... 800A q VCES ....................................................... 3300V q Insulated Type q 1-elements in a pack (for brake) q AISiC base plate APPLICATION DC choppers, Dynamic braking choppers. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.25 190 171 57 ±0.25 57 ±0.25 6 - M8 NUTS C C C K (C) G E 124 ±0.25 140 C C C 40 20 E E A (E) CM E E E CIRCUIT DIAGRAM C E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 38 8 - φ7MOUNTING HOLES 15 40 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 29.5 28 Mar. 2003 MITSUBISHI HVIGBT MODULES CM800E2C-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 95°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 800 1600 800 1600 9600 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 800A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1650V, IC = 800A, VGE = 15V VCC = 1650V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5Ω Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = –1600A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Per 2/3 module) IF = 800A, Clamp diode part IF = 800A dif / dt = –1600A / µs, Clamp diode part Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/3 module) Min — 4.5 — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.80 4.00 120 12.0 3.6 5.7 — — — — 2.80 — 270 — — 0.008 3.00 — 270 — 0.008 Max 10 7.5 0.5 4.94 — — — — — 1.60 2.00 2.50 1.00 3.64 1.40 — 0.013 0.025 — 3.90 1.40 — 0.025 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W V µs µC K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800E2C-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj=25°C COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT IC (A) VGE=14V 1200 VGE=15V VGE=20V 800 VGE=13V VGE=12V VGE=11V VGE=10V VCE=10V 1200 800 VGE=9V 400 VGE=8V VGE=7V 0 0 2 4 6 8 10 400 Tj = 25°C Tj = 125°C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE=15V 10 Tj = 25°C 8 IC = 1600A 6 IC = 800A 6 4 4 2 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2 IC = 320A 0 4 8 12 16 20 0 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 VGE = 0V, Tj = 25°C Cies, Coes : f = 100kHz : f = 1MHz Cres Cies 6 4 Coes 2 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 EMITTER CURRENT IE (A) MITSUBISHI HVIGBT MODULES CM800E2C-66H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIMES (µs) 3 2 100 7 5 3 2 10–1 7 5 td(off) td(on) tr tf VCC = 1650V, VGE = ±15V RG = 2.5Ω, Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 5 101 7 5 3 2 100 7 5 Irr 103 7 5 3 2 trr 5 7 102 2 3 5 7 103 2 3 5 102 7 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) 2.0 Eon 1.5 Eoff 1.0 0.5 0 Erec SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 VCC = 1650V, VGE = ±15V, RG = 2.5Ω, Tj = 125°C, 2.5 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 10 VCC = 1650V, IC = 800A, VGE = ±15V, Tj = 125°C, 8 Inductive load 6 Eon 4 2 Eoff 0 400 800 CURRENT (A) 1200 1600 0 0 10 20 30 GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) VCC = 1650V IC = 800A 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Single Pulse TC = 25°C Rth(j – c)Q = 0.013K/ W Rth(j – c)R = 0.025K/ W 12 8 4 0 0 2000 4000 6000 8000 10000 10–2 10–3 2 3 5 7 10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (s) GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 2.5Ω 2 Mar. 2003