HIGH POWER SWITCHING USE INSULATED TYPE

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H q IC ................................................................... 800A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 57±0.25 57±0.25 4 - M8 NUTS 4(E1) E1 20 2(C2) C2 E1 C2 124±0.25 140 30 G1 G2 C1 3(C1) 1(E2) E2 CM C1 E2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 16 40 6 - M4 NUTS 53 18 44 57 55.2 6 - φ 7 MOUNTING HOLES 11.85 screwing depth min. 7.7 screwing depth min. 16.5 5 35 11.5 14 38 +2 0 28 +2 0 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 5 LABEL Jul. 2005 31.5 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 800 1600 800 1600 6200 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES ≤ 1700V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 80mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 25°C IC = 800A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 800A, VGE = 15V, Tj = 25°C IE = 800A, VGE = 0V, Tj = 25°C (Note 4) IE = 800A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 800A, VGE = ±15V RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 800A, VGE = ±15V RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 800A, VGE = ±15V RG(on) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load Min — 4.5 — — — — — — — — — — — — — — — — — — Limits Typ — 5.5 — 2.60 3.10 72 9.0 3.6 6.6 2.30 2.00 — — 350 — — 260 — 300 120 Max 12 6.5 0.5 3.30 — — — — — 3.00 — 1.60 1.30 — 2.70 0.50 — 2.70 — — Unit mA V µA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs µC mJ/pulse (Note 4) (Note 4) Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λgrease = 1W/m·K, 1/2 module Min — — — Limits Typ — — 16.0 Max 20.0 34.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 250 10.0 15.0 — — Limits Typ — — — 1.0 — — — 18 0.16 Max 13.0 6.0 2.0 — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part TC = 25°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj = 25°C 1400 VGE = 12V VGE = 15V 1400 VGE = 20V 1600 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT (A) 1000 800 600 400 COLLECTOR CURRENT (A) 1200 1200 1000 800 600 400 200 0 VGE = 10V VGE = 8V 200 0 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 6 VGE = 15V 5 EMITTER-COLLECTOR VOLTAGE (V) Tj = 25°C Tj = 125°C 5 4 4 3 3 2 2 1 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 0 0 400 800 1200 1600 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 800A Tj = 25°C VGE = 0V, Tj = 25°C f = 100kHz 16 CAPACITANCE (nF) 102 7 5 3 2 Cies GATE-EMITTER VOLTAGE (V) 5 7 102 12 8 101 7 5 3 2 Coes 4 Cres 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1000 VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load Eon 1200 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 800A VGE = ±15V Tj = 125°C, Inductive load SWITCHING ENERGIES (mJ/pulse) 800 SWITCHING ENERGIES (mJ/pulse) 1000 Eon 800 600 Eoff 600 Eoff 400 400 200 Erec 200 Erec 0 0 400 800 1200 1600 0 0 5 10 15 20 25 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY TIME (µs) 3 2 3 2 100 7 5 3 2 td(off) td(on) tf 101 7 5 3 2 103 7 5 lrr trr 3 2 10-1 7 5 3 2 100 7 5 3 2 102 7 5 3 2 5 7 102 5 7 103 5 7 104 tr 10-2 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10-1 1 10 101 2 3 2 3 2 3 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 2500 VCC ≤ 1150V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 3.3Ω NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Single Pulse, TC = 25°C Rth(j–c)Q = 20K/kW Rth(j–c)R = 34K/kW 1.0 2000 0.8 COLLECTOR CURRENT (A) 1500 0.6 1000 0.4 0.2 500 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 REVERSE RECOVERY CURRENT (A) VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load VCC = 850V, VGE = ±15V RG(on) = RG(off) = 3.3Ω Tj = 125°C, Inductive load 104 7 5 SWITCHING TIMES (µs)