HIGH POWER SWITCHING USE

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N q IC ................................................................ 1800A q VCES ....................................................... 1700V q Insulated Type q 1-element in a Pack q AISiC Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130±0.5 57±0.25 57±0.25 4 - M8 NUTS 4(C) C 2(C) 4 2 124±0.25 140±0.5 20±0.1 40±0.2 G 3 1 E 3(E) 1(E) C E G CIRCUIT DIAGRAM 3 - M4 NUTS 10.65±0.2 48.8±0.2 10.35±0.2 6 - φ 7 MOUNTING HOLES 61.5±0.3 screwing depth min. 7.7 screwing depth min. 16.5 15±0.2 40±0.2 5.2±0.2 18±0.2 38 +1 –0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2 28 –0 +1 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1800 3600 1800 3600 10000 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 180mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1800A, VGE = 15V, Tj = 25°C IC = 1800A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C IE = 1800A, VGE = 0V, Tj = 25°C (Note 4) IE = 1800A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = ±15V RG(off) = 2.2Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 1800A, VGE = ±15V RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH Inductive load Min — 6.0 — — — — — — — — — — — — — — — — — — — Limits Typ — 7.0 — 2.15 2.40 264 14.4 4.2 10.2 2.60 2.30 1.00 0.40 550 1.20 0.30 560 1.00 720 420 280 Max 6 8.0 0.5 2.80 — — — — — 3.30 — — — — — — — — — — — Unit mA V µA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse (Note 4) (Note 4) Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 11.0 Max 12.5 28.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 19.5 32.0 — — Limits Typ — — — 0.8 — — — 16 0.14 Max 20.0 6.0 3.0 — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part TC = 25°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 3600 Tj = 125°C 3000 VGE = 15V VGE = 12V 3000 3600 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V COLLECTOR CURRENT (A) 2400 COLLECTOR CURRENT (A) VGE = 20V 2400 1800 VGE = 10V 1800 1200 1200 600 VGE = 8V 0 0 1 2 3 4 5 6 600 Tj = 25°C Tj = 125°C 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 5 VGE = 15V FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 4 EMITTER-COLLECTOR VOLTAGE (V) Tj = 25°C Tj = 125°C 4 3 3 2 2 1 1 Tj = 25°C Tj = 125°C 0 0 600 1200 1800 2400 3000 3600 0 0 600 1200 1800 2400 3000 3600 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 1800A Tj = 25°C Cies GATE-EMITTER VOLTAGE (V) 5 7 102 16 CAPACITANCE (nF) 102 7 5 3 2 12 8 101 7 5 3 2 Coes Cres VGE = 0V, Tj = 25°C f = 100kHz 2 3 5 7 100 2 3 5 7 101 2 3 4 100 -1 10 0 0 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2000 VCC = 850V, VGE = ±15V RG(on) = 0.9Ω, RG(off) = 2.2Ω Tj = 125°C, Inductive load SWITCHING ENERGIES (mJ/pulse) 3000 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 1800A, VGE = ±15V Tj = 125°C, Inductive load Eon SWITCHING ENERGIES (mJ/pulse) 1600 2500 2000 1200 Eoff 1500 Eoff 1000 800 Eon 400 Erec 500 Erec 0 0 600 1200 1800 2400 3000 3600 0 0 2 4 6 8 10 12 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 600 VCC = 850V, VGE = ±15V RG(on) = 0.9Ω Tj = 125°C, Inductive load REVERSE RECOVERY CHARGE (µC) VCC = 850V, VGE = ±15V RG(on) = 0.9Ω, RG(off) = 2.2Ω Tj = 125°C, Inductive load 500 Qrr SWITCHING TIMES (µs) td(off) 100 7 5 3 2 400 td(on) tr tf 300 10-1 7 5 3 2 200 100 10-2 2 10 2 3 5 7 103 2 3 5 7 104 0 0 600 1200 1800 2400 3000 3600 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 5000 VCC ≤ 1200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 2.2Ω NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Single Pulse, TC = 25°C Rth(j–c)Q = 12.5K/kW Rth(j–c)R = 28K/kW 1.0 4000 0.8 COLLECTOR CURRENT (A) 3000 0.6 2000 0.4 0.2 1000 Module Chip 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005