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MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1800HC-34H
q IC ................................................................ 1800A q VCES ....................................................... 1700V q Insulated Type q 1-element in a pack q AISiC base plate
APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57 ±0.25
190 171 57 ±0.25
57 ±0.25
6 - M8 NUTS C
C
C
C
G E
124 ±0.25 140
C
C
C
40
20
E
E
E
CM C
E
E
E
CIRCUIT DIAGRAM
E
G
20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2
38
8 - φ7MOUNTING HOLES
15 40
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
5
LABEL
29.5
28
Mar. 2003
PRE
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
AR LIMIN
Y
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 85°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1800 3600 1800 3600 15600 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg
(Note 1) (Note 1)
— — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 180mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 1800A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 850V, IC = 1800A, VGE = 15V VCC = 850V, IC = 1800A VGE1 = VGE2 = 15V RG = 0.3Ω Resistive load switching operation IE = 1800A, VGE = 0V IE = 1800A, die / dt = –5100A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 5.5 — 2.40 2.95 168 21.0 8.4 15.4 — — — — 2.50 — 700 — — 0.006 Max 32 6.5 0.5 — — — — — — 1.60 2.00 2.70 0.80 — 2.70 — 0.008 0.013 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance
Note 1. 2. 3. 4.
(Note 4)
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
