HIGH POWER SWITCHING USE INSULATED TYPE

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HG-66H q IC ................................................................ 1200A q VCES ....................................................... 3300V q High Insulated Type q 1-element in a Pack q AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190±0.5 57±0.25 57±0.25 57±0.25 5 - M8 NUTS 17±0.1 (6) C C (4) C (2) C 6 4 2 124±0.25 140±0.5 44±0.3 5 E G 3 1 G E E (5) E (3) E (1) C 9±0.1 CIRCUIT DIAGRAM 3 - M4 NUTS 14±0.3 59.2±0.5 8 - φ 7 MOUNTING HOLES 61.2±0.5 screwing depth min. 7.7 61.2±0.5 12±0.3 screwing depth min. 16.5 18±0.3 41±0.5 22±0.3 48 +1.0 0 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 40.4±0.3 LABEL 38 +1.0 0 5±0.15 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Qpd tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Partial discharge Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 90°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 1200 2400 1200 2400 12500 –40 ~ +150 –40 ~ +125 –40 ~ +125 10200 10 10 Unit V V A A A A W °C °C °C V pC µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. V1 = 6900Vrms, V2 = 5100Vrms f = 60Hz (acc. to IEC 1287) VCC = 2200V, VCES ≤ 3300V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 120mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 1650V, IC = 1200A, VGE = ±15V RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = ±15V RG(off) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load VCC = 1650V, IC = 1200A, VGE = ±15V RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH Inductive load Min — 5.0 — — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.30 3.60 180 18.0 5.4 8.6 2.80 2.70 — — 1.60 — — 1.55 — 800 0.90 Max 15 7.0 0.5 4.20 — — — — — 3.60 — 1.60 1.00 — 2.50 1.00 — 1.40 — — Unit mA V µA V nF nF nF µC V µs µs J/pulse µs µs J/pulse µs µC J/pulse (Note 4) (Note 4) V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K Min — — — Limits Typ — — 6.0 Max 10.0 20.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 26.0 56.0 — — Limits Typ — — — 1.35 — — — 18 0.18 Max 15.0 6.0 3.0 — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part TC = 25°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125°C 2000 2000 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V COLLECTOR CURRENT (A) 1600 VGE = 15V VGE = 12V COLLECTOR CURRENT (A) VGE = 20V 1600 1200 VGE = 10V 800 VGE =8V 1200 800 400 400 Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 6 VGE = 15V 5 EMITTER-COLLECTOR VOLTAGE (V) 5 4 4 3 3 2 2 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 1650V, IC = 1200A Tj = 25°C GATE-EMITTER VOLTAGE (V) VGE = 0V, Tj = 25°C f = 100kHz Cies 16 CAPACITANCE (nF) 102 7 5 3 2 12 Coes 101 7 5 3 2 8 Cres 4 100 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 0 0 3 6 GATE CHARGE (µC) 9 12 COLLECTOR-EMITTER VOLTAGE (V) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load 6 Eon 5 Eoff 2 SWITCHING ENERGIES (J/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 1200A VGE = ±15V Tj = 125°C, Inductive load Eon 2.5 SWITCHING ENERGIES (J/pulse) 4 1.5 3 Eoff 2 1 Erec 0.5 1 Erec 0 0 400 800 1200 1600 2000 2400 0 0 5 10 15 20 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY TIME (µs) 3 2 3 2 101 7 5 3 2 101 7 5 3 2 103 Irr 7 5 3 2 td(off) 100 7 5 3 2 td(on) tr tf 5 7 102 5 7 103 5 7 104 100 7 5 3 2 102 trr 7 5 3 2 5 7 102 5 7 103 5 7 104 10-1 1 10 2 3 2 3 2 3 10-1 1 10 101 2 3 2 3 2 3 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Single Pulse, TC = 25°C Rth(j–c)Q = 10K/kW Rth(j–c)R = 20K/kW 1.0 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 REVERSE RECOVERY CURRENT (A) VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load VCC = 1650V, VGE = ±15V RG(on) = RG(off) = 1.6Ω Tj = 125°C, Inductive load 104 7 5 SWITCHING TIMES (µs) MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC ≤ 2200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 1.6Ω 3000 FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC ≤ 2200V, di/dt ≤ 5400A/µs Tj = 125°C 2500 REVERSE RECOVERY CURRENT (A) 0 1000 2000 3000 4000 2500 COLLECTOR CURRENT (A) 2000 2000 1500 1500 1000 1000 500 500 0 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005