HIGH POWER SWITCHING USE INSULATED TYPE

www.DataSheet4U.com PRE HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HC-66H CM1200HC-66H q IC ................................................................ 1200A q VCES ....................................................... 3300V q Insulated Type q 1-element in a pack q AISiC base plate. APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.25 190 171 57 ±0.25 57 ±0.25 6 - M8 NUTS C C C C G E 124 ±0.25 140 C C C 40 20 E E E CM C E E E CIRCUIT DIAGRAM E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 38 8 - φ7MOUNTING HOLES 15 40 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 29.5 28 Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C, IGBT part Conditions Ratings 3300 ±20 1200 2400 1200 2400 12500 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 120mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 1200A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 1650V, IC = 1200A, VGE = 15V VCC = 1650V, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6Ω Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = –2400A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.30 3.60 180 18.0 5.4 8.6 — — — — 2.80 — 400 — — 0.008 Max 15 7.5 0.5 4.29 — — — — — 1.60 2.00 2.50 1.00 3.64 1.40 — 0.010 0.020 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. (Note 4) (Note 1) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 25°C VGE = 20V VGE = 14V 1600 1200 800 400 0 VGE = 9V VGE = 15V VGE = 13V VGE = 12V VGE = 11V VGE = 10V 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V 2000 1600 1200 800 400 0 COLLECTOR CURRENT IC (A) 2000 VGE = 8V 0 2 4 6 8 10 COLLECTOR CURRENT IC (A) Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 8 VGE = 15V 6 10 Tj = 25°C 8 6 4 4 2 Tj = 25°C Tj = 125°C 0 400 800 1200 1600 2000 2400 2 0 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj = 25°C CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) 2 3 4 5 EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 103 7 5 3 2 102 7 5 3 2 101 7 5 3 VGE = 0V, Tj = 25°C 2 Cies, Coes : f = 100kHz : f = 1MHz Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 EMITTER-COLLECTOR VOLTAGE VEC (V) Mar. 2001 PRE . ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som AR LIMIN Y MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 3 2 100 7 5 3 2 10–1 7 5 td(off) td(on) tf tr VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load 5 7 102 2 3 5 7 103 2 3 5 101 7 5 3 2 100 7 5 103 7 5 3 2 102 7 5 5 7 102 2 3 5 7 103 2 3 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.010K/ W 2 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.020K/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) VGE – GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 1650V IC = 1200A 16 12 8 4 0 0 5000 10000 15000 20000 GATE CHARGE QG (nC) REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (µs) SWITCHING TIMES (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 1650V, Tj = 125°C 3 Inductive load 3 2 VGE = ±15V, RG = 1.6Ω 2 Mar. 2001