HIGH POWER SWITCHING USE INSULATED TYPE

www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DB-34N q IC ................................................................ 1200A q VCES ....................................................... 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.5 57±0.25 57±0.25 4 - M8 NUTS Dimensions in mm 4(E1) 2(C2) C2 20±0.1 E1 4 2 G1 124±0.25 140±0.5 G2 C1 3(C1) 1(E2) E2 3 1 30±0.2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 6 - M4 NUTS 53±0.2 16±0.2 18±0.2 40±0.2 44±0.2 57±0.2 6 - φ 7 MOUNTING HOLES 55.2±0.3 screwing depth min. 7.7 11.85±0.2 screwing depth min. 16.5 5±0.2 35±0.2 11.5±0.2 14±0.2 38 +1 –0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 29.5±0.5 5±0.2 28 +1 –0 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2400 1200 2400 6900 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec (Note 2) Note 1. 2. 3. 4. Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy Conditions VCE = VCES, VGE = 0V, Tj = 25°C IC = 120mA, VCE = 10V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 25°C IC = 1200A, VGE = 15V, Tj = 125°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C VCC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C IE = 1200A, VGE = 0V, Tj = 25°C (Note 4) IE = 1200A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(off) = 3.3Ω, Tj = 125°C, Ls = 150nH Inductive load VCC = 850V, IC = 1200A, VGE = ±15V RG(on) = 1.3Ω, Tj = 125°C, Ls = 150nH Inductive load Min — 6.0 — — — — — — — — — — — — — — — — — — — Limits Typ — 7.0 — 2.15 2.40 176 9.6 2.8 6.8 2.60 2.30 1.00 0.40 380 1.20 0.30 360 1.00 560 300 220 Max 4 8.0 0.5 2.80 — — — — — 3.30 — — — — — — — — — — — Unit mA V µA V nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse (Note 4) (Note 4) Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part, 1/2 module Junction to Case, FWDi part, 1/2 module Case to Fin, λgrease = 1W/m·K, 1/2 module Min — — — Limits Typ — — 16.0 Max 18.0 40.0 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 9.5 15.0 — — Limits Typ — — — 1.3 — — — 30 0.28 Max 20.0 6.0 3.0 — — — — — — Unit M — CTI da ds LC-E(int) RC-E(int) Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance N·m kg — mm mm nH mΩ IGBT part TC = 25°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125°C 2000 VGE = 15V VGE = 12V 2000 2400 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V COLLECTOR CURRENT (A) 1600 VGE = 10V COLLECTOR CURRENT (A) VGE = 20V 1600 1200 1200 800 800 400 VGE = 8V 0 0 1 2 3 4 5 6 400 Tj = 25°C Tj = 125°C 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 COLLECTOR-EMITTER SATURATION VOLTAGE (V) 5 VGE = 15V 4 EMITTER-COLLECTOR VOLTAGE (V) Tj = 25°C Tj = 125°C 4 3 3 2 2 1 1 Tj = 25°C Tj = 125°C 0 0 400 800 1200 1600 2000 2400 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 850V, IC = 1200A Tj = 25°C CAPACITANCE (nF) 102 7 5 3 2 GATE-EMITTER VOLTAGE (V) 5 7 102 Cies 16 12 8 101 7 5 3 2 Coes 4 100 -1 10 VGE = 0V, Tj = 25°C f = 100kHz 2 3 5 7 100 2 3 5 7 101 Cres 2 3 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1200 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 125°C, Inductive load 2000 Eon SWITCHING ENERGIES (mJ/pulse) 1600 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 850V, IC = 1200A VGE = ±15V Tj = 125°C, Inductive load SWITCHING ENERGIES (mJ/pulse) 1000 Eon 800 Eoff 1200 600 800 Eoff 400 Erec 400 Erec 200 0 0 400 800 1200 1600 2000 2400 0 0 2 4 6 8 10 12 COLLECTOR CURRENT (A) GATE RESISTANCE (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 7 5 3 2 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 500 VCC = 850V, VGE = ±15V RG(on) = 1.3Ω Tj = 125°C, Inductive load REVERSE RECOVERY CHARGE (µC) VCC = 850V, VGE = ±15V RG(on) = 1.3Ω, RG(off) = 3.3Ω Tj = 125°C, Inductive load 400 Qrr 300 SWITCHING TIMES (µs) td(off) 100 7 5 3 2 td(on) tr tf 200 10-1 7 5 3 2 100 10-2 2 10 2 3 5 7 103 2 3 5 7 104 0 0 400 800 1200 1600 2000 2400 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC ≤ 1200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 3.3Ω NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Single Pulse, TC = 25°C Rth(j–c)Q = 18K/kW Rth(j–c)R = 40K/kW 1.0 2500 COLLECTOR CURRENT (A) 0.8 2000 0.6 1500 0.4 1000 0.2 500 Module Chip 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005