SMD Switching Diode

SMD Switching Diode CDSP400-G (RoHS Device) Reverse Voltage: 80 Volts Forward Current: 100 mA Features: Small Surface Mounting Type High Speed High Reliability with High Surge Current Handling Capability. L E1 θ c E2 E b D + - SOD-723 Mechanical Data: Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method 2026.1. Polarity: Indicated by cathode band. Mounting position: Any. Marking: 7 Symbol A A1 b c D E E1 E2 L θ Inches θ Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.001 0.003 7º REF A1 A Millimeters Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.300 1.500 0.200 REF 0.010 0.070 7º REF Maximum Ratings (at TA=25ºC unless otherwise specified) www.DataSheet4U.com Parameter DC reverse voltage Mean rectifying current Peak forward current Junction temperature Storage temperature Peak reverse voltage Surge current Tp=1S Symbol VR Io IFM TJ Tstg VRM Isurge Limits 80 100 225 125 -55~+125 90 500 Unit V mA A ºC ºC V mA Electrical Ratings (at TA=25ºC unless otherwise specified) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time “-G” suffix designated RoHS compliant version Symbol VF IR CT Trr Min. Typ. Max. 1.2 0.1 3.0 4.0 Unit V μA pF nS Conditions IF=100mA VR=80V VR=0.5V, f=1MHz VR=6V, IF=10mA, RL=100Ω Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Switching Diode CDSP400-G (RoHS Device) Rating and Characteristic Curves Fig. 1 Forward characteristics 1 100m Capacitance between Terminals (pF) Fig. 2 Capacitiance between terminals 10 5 2 1 0.5 0.2 0.1 0 2 4 6 8 10 12 14 Forward Current (A) 10m 75ºC 1m 125ºC 25ºC 100μ 10μ 0 0.2 -25ºC 0.4 0.6 0.8 1.0 1.2 1.4 Forward Voltage (V) Reverse Voltage (V) Fig. 3 Reverse characteristics 1m 100μ 100 Fig. 4 Surge current charavteristics Pulse Single pulse Reverse Current (A) 10μ 1μ 100n 10n 1n 0 20 40 60 80 100 120 75ºC Surge Current (A) 125ºC 10 25ºC 1 0 1 10 100 1000 10000 Reverse Voltage (V) Pulse Width (mS) Reverse Recovery Time (nS) Fig. 5 Reverse recovery time characteristics 3 Fig. 6 Reverse recovery time (trr) measurement circuit 0.01μF 2 D.U.T. 50kΩ 1 Pulse Generator Output 50Ω 50Ω Sampling Oscilloscope 0 0 10 20 30 Forward Current (mA) “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2