CMOS 4-Bit Magnitude Comparator

CD4066BMS December 1992 CMOS Quad Bilateral Switch Description CD4066BMS is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin for pin compatible with CD4016B, but exhibits a much lower on state resistance. In addition, the on-state resistance is relatively constant over the full input signal range. The CD4066BMS consists of four independent bilateral switches. A single control signal is required per switch. Both the p and the n device in a given switch are biased on or off simultaneously by the control signal. As shown in Figure 1, the well of the n channel device on each switch is either tied to the input when the switch is on or to VSS when the switch is off. This configuration eliminates the variation of the switch transistor threshold voltage with input signal, and thus keeps the on-state resistance low over the full operating signal range. The advantages over single channel switches include peak input signal voltage swings equal to the full supply voltage, and more constant on-state impedance over the input signal range. For sample and hold applications, however, the CD4016B is recommended. The CD4066BMS is supplied in these 14-lead outline packages: Braze Seal DIP H4Q Frit Seal DIP H1B Ceramic Flatpack H3W Features • For Transmission or Multiplexing of Analog or Digital Signals • High Voltage Types (20V Rating) • 15V Digital or ±7.5V Peak-to-Peak Switching • 125Ω Typical On-State Resistance for 15V Operation • Switch On-State Resistance Matched to Within 5Ω Over 15V Signal Input Range • On-State Resistance Flat Over Full Peak-to-Peak Signal Range • High On/Off Output Voltage Ratio - 80dB Typ. at FIS = 10kHz, RL = 1kΩ • High Degree of Linearity: <0.5% Distortion Typ. at FIS = 1kHz, VIS = 5Vp-p, VDD - VSS ≥ 10V, RL = 10kΩ • Extremely Low Off-State Switch Leakage Resulting in Very Low Offset Current and High Effective Off-State Resistance: 10pA Typ. at VDD - VSS = 10V, TA = +25oC • Extremely High Control Input Impedance (Control Circuit Isolated from Signal Circuit): 1012Ω Typ. • Low Crosstalk Between Switches: -50dB Typ. at FIS = 8MHz, RL = 1kΩ • Matched Control Input to Signal Output Capacitance: Reduces Output Signal Transients • Frequency Response, Switch on = 40MHz (Typ.) • 100% Tested for Quiescent Current at 20V • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of “B” Series CMOS Devices” Pinout CD4066BMS TOP VIEW IN/OUT A 1 OUT/IN A 2 14 VDD 13 CONT A 12 CONT D 11 IN/OUT D 10 OUT/IN D 9 OUT/IN C 8 IN/OUT C Applications • Analog Signal Switching/Multiplexing - Signal Gating - Modulator - Squelch Control - Demodulator - Chopper - Commutating Switch • Digital Signal Switching/Multiplexing • Transmission Gate Logic Implementation • Analog to Digital & Digital to Analog Conversion • Digital Control of Frequency, Impedance, Phase, and Analog Signal Gain OUT/IN B 3 IN/OUT B 4 CONT B 5 CONT C 6 VSS 7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3319 7-966 Specifications CD4066BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VC = VDD or GND 3 1 2 3 Input Leakage Current IIH VC = VDD or GND 1 2 3 Input/Output Leakage Current (Switch OFF) IOZL VC = 0V, VIS = 18V, VOS = 0V, VIS = 0V, VOS = 18V VDD = 20 1 2 VDD = 18V IOZH VDD = 20 3 1 2 VDD = 18V On Resistance RON5 RON10 RON15 On Resistance RON5 VC = VDD, RL = 10kW VDD = 5V returned to VDD VDD = 10V VSS/2 VDD = 15V VIS = VSS to VDD VDD = 5V 3 1 1 1 1, 2 LIMITS TEMPERATURE +25 oC PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND MIN -100 -1000 -100 -100 -1000 -100 1050 400 240 - MAX 0.5 50 0.5 100 1000 100 100 1000 100 1300 800 550 310 320 220 UNITS µA µA µA nA nA nA nA nA nA nA nA nA nA nA nA Ω Ω Ω Ω Ω Ω Ω Ω Ω V +125oC -55oC +25o C +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +25oC +25oC +125oC -55 C o On Resistance RON10 VDD = 10V 1, 2 +125 C -55oC o On Resistance RON15 VDD = 15V 1, 2 +125 C -55 C o o Functional (Note 3) F VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND 7 7 8A 8B 1, 2, 3 1, 2, 3 1 1 +25 C +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25 C o o VOH > VOL < VDD/2 VDD/2 Switch Threshold RL = 100k to VDD N Threshold Voltage P Threshold Voltage SWTHRH5 VDD = 5V, VC = 1.5V, VIS = GND SWTHRH15 VDD = 15V, VC = 2V, VIS = GND VNTH VPTH VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA 4.1 14.1 -2.8 0.7 -0.7 2.8 V V V V 7-967 Specifications CD4066BMS TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC, +125oC, -55oC +25oC, +125oC, -55oC MIN MAX 1 2 UNITS V V PARAMETER Control Input Low Voltage (Note 2) |IIS| < 10µa, VIS = VSS, VOS = VDD and VIS = VDD, VOS = VSS Control Input High Voltage (Note 2, Figure 2) VIS = VSS and VIS = VDD SYMBOL VILC5 VILC15 CONDITIONS (NOTE 1) VDD = 5V VDD = 15V VIHC VDD = 5V, |IIS| = .51mA, 4.6V < VOS < 0.4V VDD = 5V, |IIS| = .36mA, 4.6V < VOS < 0.4V VDD = 5V, |IIS| = .64mA, 4.6V < VOS < 0.4V 1 2 3 1 2 3 +25oC +125oC -55oC +25oC +125oC -55oC 3.5 3.5 3.5 11 11 11 - V V V V V V VIHC VDD = 15V, |IIS| = 3.4mA, 13.5V < VOS <1.5V VDD = 15V, |IIS| = 2.4mA, 13.5V < VOS < 1.5V VDD = 15V, |IIS| = 4.2mA, 13.5V < VOS <1.5V NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. VDD = 2.8V/3.0V, RL = 100K to VDD VDD = 20V/18V, RL = 10K to VDD TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 40 54 70 95 UNITS ns ns ns ns PARAMETER Propagation Delay Signal Input to Signal Output Propagation Delay Turn-On, Turn-Off NOTES: SYMBOL TPLH TPHL CONDITIONS VC = VDD = 5V, VSS = GND (Notes 2, 3) TPHZ/ZH VIS = VDD = 5V (Notes 1, 2) TPLZ/ZL +25oC +125oC, -55oC 1. CL = 50pF, RL = 1K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55o C, +25 C o o MIN - MAX 0.25 7.5 0.5 15 0.5 30 2 UNITS µA µA µA µA µA µA V +125 C VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55 C, +25 C +125 C Control Input Low Voltage |IIS| < 10µa, VIS = VSS, VOS = VDD and VIS = VDD, VOS = VSS VILC10 VDD = 10V 1, 2 +25oC, +125oC, -55oC o o o - 7-968 Specifications CD4066BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Control Input High Voltage (See Figure 2) Propagation Delay Signal Input to Signal Output Propagation Delay Turn-On, Turn-Off Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 25 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V SYMBOL VIHC10 TPLH TPHL CONDITIONS VDD = 10V, VIS = VDD or GND VDD = 10V VDD = 15V NOTES 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC MIN 7 MAX 20 15 40 30 7.5 UNITS V ns ns ns ns pF TPHZ/ZH VDD = 10V TPLZ/ZL VDD = 15V CIN Any Input ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - S