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Fairchild Semiconductor
Fairchild Semiconductor

C5305D Datasheet

KSC5305D


C5305D Datasheet Preview


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KSC5305D
High Voltage High Speed Power Switch
Application
Equivalent Circuit
C
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time B
spread even though corner spirit product
• Low base drive requirement
1 TO-220
E 1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICP
IB
IBP
PC
TJ
TSTG
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
*Base Current (Pulse)
Power Dissipation(TC=25°C)
Junction Temperature
Storage Temperature
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja Junction to Ambient
Value
800
400
12
5
10
2
4
75
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Rating
1.65
62.5
Unit
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Page 1

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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob
tON
tSTG
tF
tSTG
tF
VF
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Storage Time
Fall Time
Diode Forward Voltage
trr * Reverse recovery time
(di/dt = 10A/µs)
*Pulse Test : Pulse Width=5mS, Duty cycles 10%
IC=1mA, IE=0
IC=5mA, IB=0
IE=1mA, IC=0
VCB=500V, IE=0
VEB = 9V, IC = 0
VCE=1V, IC=0.8A
VCE=1V,IC=2A
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
VCB = 10V, f=1MHz
VCC=300V, IC =2A
IB1 = 0.4A, IB2=-1A
RL = 150
VCC=15V,VZ=300V
IC = 2A,IB1 = 0.4A
IB2 = -0.4A, LC=200µH
IF = 1A
IF = 2A
IF = 0.4A
IF = 1A
IF = 2A
Min.
800
400
12
-
-
22
8
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
-
-
0.4
0.5
1.0
1.0
75
150
2
0.2
2.25
150
Units
V
V
V
µA
µA
V
V
V
V
pF
ns
µs
µs
µs
ns
- - 1.5 V
- - 1.6 V
- 800 -
- 1.4 -
- 1.9 -
ns
µs
µs
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Page 2

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Typical Characteristics
5
IB = 500mA
IB = 450mA
IB = 400mA
4 IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
3 IB = 150mA
IB = 100mA
2 IB = 50mA
1
IB = 0
0
0 1 2 3 4 5 6 7 8 9 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
100
Ta = 125oC
25oC
-20oC
10
VCE = 5V
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
10
10
IC = 5IB
25oC
1
Ta = 125oC
0.1
-20oC
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 5. Collector-Emitter Saturation Voltage
©2001 Fairchild Semiconductor Corporation
100
Ta = 125oC
25oC
-25oC
10
VCE = 1V
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
10
1 VBE(sat)
VCE(sat)
0.1
IC = 10 IB
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
I = 5I
CB
1
-20oC
25oC
Ta = 125oC
0.1
0.01
0.1 1
I [A], COLLECTOR CURRENT
C
10
Figure 6. Base-Emitter Saturation Voltage
Rev. A1, June 2001
Page 3
Part Number C5305D
Manufactur Fairchild Semiconductor
Description KSC5305D
Total Page 6 Pages
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