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Fairchild Semiconductor
Fairchild Semiconductor

C5027 Datasheet

Search -----> KSC5027


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KSC5027
High Voltage and High Reliability
• High Speed Switching
• Wide SOA
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation ( TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
VCEX(sus)
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
Cob
fT
tON
tSTG
tF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn ON Time
Storage Time
Fall Time
Test Condition
IC = 1mA, IE = 0
IC = 5mA, RBE =
IE = 1mA, IC = 0
IC = 1.5A, IB1 = -IB2 = 0.3A
L = 2mH, Clamped
VCB = 800V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 0.2A
VCE = 5V, IC = 1A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 0.2A
VCC = 400V
IC = 5IB1 = -2.5IB2 = 2A
RL = 200
Value
1100
800
7
3
10
1.5
50
150
- 55 ~ 150
Min.
1100
800
7
800
Typ.
10
8
60
15
Units
V
V
V
A
A
A
W
°C
°C
Max.
Units
V
V
V
V
10 µA
10 µA
40
2V
1.5 V
pF
MHz
0.5 µs
3 µs
0.3 µs
hFE Classification
Classification
hFE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 1

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Typical Characteristics
4.0
3.6
3.2
2.8
2.4
IB = 250mA
2.0 IB = 200mA
1.6
IB = 150mA
IB = 100mA
IB = 80mA
1.2
IIBB
=
=
60mA
50mA
0.8
IB = 40mA
IB = 30mA
0.4
IB = 20mA
IB = 10mA
0.0 IB = 0
0 1 2 3 4 5 6 7 8 9 10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
1 VBE(sat)
IC = 5 IB
0.1 VCE(sat)
0.01
0.01
0.1 1
IC[A], COLLECTOR CURRENT
10
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
VCC = 400V
tSTG 5.IB1 = -2.5.IB2 = IC
1
tON
tF
0.1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
©2000 Fairchild Semiconductor International
10
1000
100
VCE = 5V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
VCE = 5V
0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
1.2
Figure 4. Base-Emitter On Voltage
100
ICMAX.(Pulse)
10
ICMAX(Continuous)
1 DC
0.1
0.01
1E-3
1
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
Rev. A, February 2000
Page 2

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Typical Characteristics (Continued)
100
IB2 = -0.3A
10
1
0.1
0.01
10
100
1000
10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Page 3
Part Number C5027
Manufactur Fairchild Semiconductor
Description Search -----> KSC5027
Total Page 5 Pages
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