Power Transistor

www.DataSheet4U.com BSC042N03LS G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant Type BSC042N03LS G Package PG-TDSON-8 Marking 042N03LS 1) Product Summary V DS R DS(on),max ID 30 4.2 93 V mΩ A PG-TDSON-8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=45 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) Value 93 59 75 48 Unit A 21 372 50 50 6 ±20 mJ kV/µs V I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=40 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 0.99 - target datasheet page 1 2007-03-02 www.DataSheet4U.com BSC042N03LS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 57 2.8 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=30 A Gate resistance Transconductance 2) - - 2.2 62 45 K/W 30 1 - 0.1 2.2 1 V µA - 10 10 5.2 3.5 1.5 83 100 100 6.5 4.2 Ω S nA mΩ RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 42 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information 3) Rev. 0.99 - target datasheet page 2 2007-03-02 www.DataSheet4U.com BSC042N03LS G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 7.4 3.9 3.5 7.0 15 3.1 31 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 2400 930 49 6 4 24 4 ns pF Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 13 24 - nC IS I S,pulse V SD T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs - 0.84 52 372 - A V Reverse recovery charge 4) 5) Q rr - - 20 nC See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 0.99 - target datasheet page 3 2007-03-02 www.DataSheet4U.com BSC042N03LS G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 60 100 50 80 40 60 P tot [W] 30 I D [A] 40 20 0 0 40 80 120 160 0 40 80 120 160 20 10 0 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 10 µs 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 102 100 µs 1 0.5 Z thJC [K/W] DC I D [A] 0.2 0.1 0.05 10 1 1 ms 10 ms 0 0.1 0.02 0.01 single pulse 10 10-1 10-1 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 0.99 - target datasheet page 4 2007-03-02 www.DataSheet4U.com BSC042N03LS G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 300 5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 20 18 4.5 V 250 10 V 16 3V 200 14 R DS(on) [mΩ] 12 3.2 V I D [A] 150 4V 10 8 3.5 V 100 3.5 V 4V 6 4 2 0 3 0 10 20 30 40 10 V 4.5 V 5V 11.5 V 50 3.2 V 3V 0 0 1 2 2.8 V 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 160 150 120 g fs [S] 80 40 150 °C 25 °C I D [A] 100 50 0 0 1 2 3 4 5 0 0 40 80 120 160 V GS [V] I D [A] Rev. 0.99 - target datasheet page 5 2007-03-02 www.DataSheet4U.com BSC042N03LS G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 8 2.5 7 2 6 R DS(on) [mΩ] 5 4 typ V GS(th) [V] 100 140 180 98 % 1.5 3 1 2 0.5 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 1000 150 °C, 98% 25 °C Ciss 103 Coss 1000 100 C [pF] I F [A] 150 °C 25 °C, 98% 102 100 10 Crss 101 10 1 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 0 V DS [V] V SD [V] Rev. 0.99 - target datasheet page 6 2007-03-02 www.DataSheet4U.com BSC042N03LS G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 6V 24 V 15 V 10 25 °C 100 °C 8 10 125 °C V GS [V] 100 1000 I AV [A] 6 4 2 1 1 10 0 0 8 16 24 32 40 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 0.99 - target datasheet page 7 2007-03-02 www.DataSheet4U.com BSC042N03LS G Package Outline PG-TDSON-8: Outline PG-TDSON-8 Footprint Dimensions in mm Rev. 0.99 - target datasheet page 8 2007-03-02 www.DataSheet4U.com BSC042N03LS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 0.99 - target datasheet page 9 2007-03-02 www.DataSheet4U.com BSC042N03LS G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.99 - target datasheet page 10 2007-03-02