NPN LOW NOISE SILICON MICROWAVE TRANSISTOR

www.DataSheet4U.com BIPOLARICS, INC. Part Number BRF504 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 4mA t DESCRIPTION AND APPLICATIONS: Bipolarics' BRF504 is a high performance silicon bipolar transistor intended for use in low noise application at VHF, UHF and microwave frequencies. High performance low noise performance can be realized at 2 mA or less making the BRF504 an excellent choice for battery application. From 4 mA to over 8mA, ft is nominally 10 GHz. Maximum recommended continuous current is 16 mA. A broad range of packages are offered including SOT-23, SOT-143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated dice. • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High Gain |S21| 2 = 18.1 dB @ 1 GHz 12.8 dB @ 2 GHz Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS • Dice, Plastic, Hermetic and Surface Mount packages available VCBO VCEO VEBO IC CONT T J TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature 10 10 1.5 8 200 -65 to 150 V V V mA o C o C PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) PARAMETERS & CONDITIONS VCE =8V, I C = 4 mA unless stated SYMBOL UNIT MIN. TYP. MAX. f t Gain Bandwidth Product Insertion Power Gain: f = 1.0 GHz, I C = 4 mA IC = 8 mA f = 2.0 GHz, I C = 4mA I C = 8 mA f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz ZS = 50Ω f = 1MHz : VCB =8V GHz 10 17.5 18.1 12.8 12.6 |S 21 | 2 P1d B G1d B NF hFE ICBO IEBO Power output at 1dB compression: Gain at 1dB compression: Noise Figure: VCE =8V, I C = 0.8mA Forward Current Transfer Ratio: VCE = 8V, IC = 4 mA Collector Cutoff Current Emitter Cutoff Current : VEB =1V Collector Base Capacitance: VCB = 8V dBm dBm dB 10 15 1.6 50 µA µA 100 250 0.2 1.0 C CB f = 1MHz pF 0.07