UHF amplifier module

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Nov 15 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module FEATURES • Dual band GSM amplifier • 3.6 V nominal supply voltage • 33.5 dBm output power for GSM1800 • 35.5 dBm output power for GSM900 • Easy output power control by DC voltage. • Internal input and output matching. APPLICATIONS • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. DESCRIPTION The BGY280 is a power amplifier module in a SOT559A leadless package with a plastic cap. The dimensions are 13.75 x 11 x 1.7 mm. The module consists of two separated line-ups. One for GSM900 and one for GSM1800. Internal power control, input and output matching. PINNING - SOT559A PIN 1,2,3,6,9,10,11,14 4 5 7 8 12 13 15 16 BGY280 DESCRIPTION Ground RF output 2 (1800 MHz) VS2 (1800 MHz) VS1 (900 MHz) RF output 1 (900 MHz) RF input 1 (900 MHz) VC1 (900 MHz) VC2 (1800 MHz) RF input 2 (1800 MHz) 1 16 15 14 13 12 11 Bottom view 2 3 4 5 6 7 8 10 9 MBL031 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; δ = 2 : 8 f (MHz) 880 to 915 1710 to 1785 VS (V) 3.6 3.6 VC (V) ≤2.2 ≤2.2 PL (dBm) typ. 35.5 typ. 33.5 Gp (dB) typ. 35.5 typ. 33.5 η (%) 47 40 ZS, ZL (Ω) 50 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1, VS2 VC1, VC2 PD1, PD2 PL1 PL2 Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power 1 load power 2 storage temperature operating mounting base temperature CONDITIONS VC1,2 = 0; RFIN = off VC1,2 > 0.5 V; RFIN = on − − − − − − −40 −30 MIN. 7 5.5 3 10 4 3 +100 +100 MAX. V V V mW W W °C °C UNIT 2000 Nov 15 2 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module CHARACTERISTICS ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 ≤ 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 2 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified. SYMBOL IL PARAMETER leakage current CONDITIONS VC1,2 = 0.2 V VC1 = 2.2 V VC1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C VC2 = 2.2 V VC2 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C PL1 = 35.5 dBm PL2 = 33 dBm PL1 = 35 dBm PL2 = 32 dBm PL1 = 34 dBm PL2 = 32 dBm VS1,2 = 3.2 to 5 V; PL1 = 34 dBm; PL2 = 32 dBm VS1,2 = 3.2 to 5 V; VC1,2 ≤ 0.5 V VC1,2 = 0.5 V; PD1,2 = 3 dBm VC1,2 = 0.5 V; PD1,2 = 3 dBm MIN. − − 34.5 34 32.5 32 − − 40 33 − − − − − − − 120 − − − − − − −54 −42 −21 − 1.5 1.5 − −82 −80 − TYP. − − 35.5 35 33.5 33 35.5 33.5 45 38 − − BGY280 MAX. 10 2 − − − − − − − − −40 −35 3:1 8:1 −37 −37 −20 200 2 2 −71 −80 −73 6 UNIT µA mA dBm dBm dBm dBm dB dB % % dBc dBc ICM1, ICM2 peak control current PL1 PL2 GP1 GP2 η1 η2 H2, H3 load power GSM 900 load power GSM 1800 power gain GSM900 power gain GSM1800 efficiency GSM900 efficiency GSM1800 harmonics GSM900 harmonics GSM1800 input VSWR of active device VSWRin input VSWR of inactive device isolation GSM900 isolation GSM1800 dBm dBm dBm dB/V µs µs dBm dBm dBm deg/dB second harmonic isolation PL1 = 35 dBm from GSM900 into GSM1800 maximum slope tr tf carrier rise time carrier fall time −5 dBm < PL1,2 < PL max PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; time to settle within −0.5 dB of final PL PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; time to fall below −37 dBm PL1 ≤ 34 dBm; bandwidth = 100 kHz; f = 925 - 935 MHz; fc = 897.5 MHz PL1 ≤ 34 dBm; bandwidth = 100 kHz; f = 935 - 960 MHz; fc = 897.5 MHz PL2 ≤ 32 dBm; bandwidth = 100 kHz; f = 1805 - 1880 MHz; fc = 1747.5 MHz PD1,2 = −0.5 to 0.5 dBm; PL1,2 = constant during measurement for PL1 = 6 to 34 dBm and PL2 = 4 to 32 dBm PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; f = 100 kHz; PD1,2 = 5.4 % noise power GSM900 Pn noise power GSM1800 AM/PM conversion AM/AM conversion − 25 % 2000 Nov 15 3 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module BGY280 SYMBOL PARAMETER TX / RX conversion PL1 PL1 PL2 PL2 CONDITIONS = 34 dBm; f = 915 MHz (925 MHz) / PD (905 MHz) = 32 dBm; f = 1785 MHz (1765 MHz) / PD (1805 MHz) MIN. − TYP. 25 MAX. − UNIT dB control bandwidth stability PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; VS1,2 = 3.2 to 5 V; VC = 0 to 2.2 V; PD1,2 = 0 to 3 dBm; PL1 < 34.8 dBm; PL2 < 32.5 dBm; VSWR ≤ 6 : 1 through all phases VS1,2 = 5 V; PD1,2 = 0 to 3 dBm; PL1 = 34.8 dBm; PL2 = 32.5 dBm; VSWR ≤ 6 : 1 through all phases VS1,2 = 4.2 V; PD1,2 = 0 to 3 dBm; PL1 = 34.8 dBm; PL2 = 32.5 dBm; VSWR ≤ 10 : 1 through all phases 1 − 1.5 − − −60 MHz dBc ruggedness no degradation no degradation 40 PL (dBm) 897.5MHz 50 η (%) 40 1785MHz 35 1747.5MHz 30 30 20 25 10 1710MHz 915MHz 880MHz 20 1 1.5 2 VC (V) ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. 0 2.5 20 25 30 35 40 PL (dBm) Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.2 Load power as a function of control voltage; typical values. Fig.3 Efficiency as a function of load power; typical values. 2000 Nov 15 4 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module BGY280 -20 H2 (dBc) -30 -20 H3 (dBc) -30 1710MHz -40 915MHz 880MHz -40 915MHz 880MHz 1785MHz 1710MHz -50 1785MHz -50 -60 20 25 30 35 PL (dBm) 40 -60 20 25 30 35 PL (dBm) 40 ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.4 Second harmonic as a function of load power; typical values. Fig.5 Third harmonic as a function of load power; typical values. 40 gain (dB) 30 small signal gain 40 gain (dB) (1) (2) (3) (4) (5) (6) 30 (2) (3) (1) small signal gain 20 conversion gain 20 conversion gain 10 10 (4) (5) (6) 0 10 20 30 40 PL (dBm) 0 10 20 30 40 PL (dBm) ZS = Z L = 50 Ω; P D = 0 dBm; VS = 3.6 V;T mb = 25 °C; f c = 1747.5 MHz; δ = 2 : 8; t p = 575 µs. (1) f = 1805 MHz (2) f = 1842.5 MHz (3) f = 1880 MHz (4) f = 1615 MHz (5) f = 1625.5 MHz (6) f = 1690 MHz Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; fc = 897.5 MHz; δ = 2 : 8; t p = 575 µs. (1) f = 925 MHz (2) f = 942.5 MHz (3) f = 960 MHz (4) f = 835 MHz (5) f = 852.5 MHz (6) f = 870 MHz Fig.6 Gain as a function of load power; typical values. Fig.7 Gain as a function of load power; typical values. 2000 Nov 15 5 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module BGY280 40 output AM (%) 30 8 AM-PM (deg/dB) 6 1800MHz 20 900MHz 4 10 1800MHz 2 900MHz 0 0 10 20 30 40 PL (dBm) 0 -10 0 10 20 30 40 PL (dBm) ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; ∆f = 100 kHz; input amplitude modulation = 5.4%; δ = 2 : 8; tp = 575 µs. δ = 2 : 8; t p = 575 µs. Fig.8 Output amplitude modulation as a function of load power; typical values. Fig.9 Output phase at PD = +0.5 dBm, relatively to output phase at P D = −0.5 dBm; typical values. -60 noise (dBm) -70 -80 RX=1845MHz RX=942.5MHz -90 -100 0 10 20 30 PL (dBm) 40 ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.10 Noise as a function of load power; typical values. 2000 Nov 15 6 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module BGY280 RF input RF output VS Z2 Z3 BGY280 GSM900 12 VC VC 13 15 16 GSM1800 8 7 5 4 Z1 Z4 RF input RF output VS Fig.11 Test circuit List of components (See Fig 10 and 11) COMPONENT C1, C4 C2, C3 Z1, Z2, Z3, Z4 R1, R2 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness 1⁄32 inch. DESCRIPTION multilayer ceramic chip capacitor electrolytic capacitor stripline; note 1 metal film resistor VALUE 100 µF; 40 V 100 nF 50 Ω 100 Ω; 0.6 W width 2.33 mm 2322 156 11001 DIMENSIONS CATALOGUE NO. 2000 Nov 15 7 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module BGY280 Fig.12 PCB testcircuit 2000 Nov 15 8 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module PACKAGE OUTLINE SOT559A BGY280 Leadless surface mounted package; plastic cap; 16 terminations L1 (4×) L (12×) 1 L2 16 b4 (4×) (4×) 15 e1 2 e1 b (12×) 3 4 5 e b2 (2×) b7 (4×) 13 b8 (4×) 12 11 b3 (4×) 10 b1 (2×) D D1 A c 9 14 6 e 7 8 e2 Z8 (6×) Z7 (6×) Z5 (4×) L3 (4×) Z6 (12×) Z (2×) Z4 (12×) SOT559A e2 Z1 (2×) Z3 (2×) b6 (4×) b5 (4×) Z2 (2×) Dimensions solderresist E1 E pin 1 index 0 5 scale 10 mm Z1 2.5 2.3 Z2 3.5 3.3 Z3 2.9 2.7 Z4 1.1 0.9 Z5 1.5 1.3 Z6 1.1 0.9 Z7 3.8 3.6 Z8 1.5 1.3 DIMENSIONS (mm are the original dimensions) UNIT mm A 1.9 1.5 b 1.1 0.9 b1 3.5 3.3 b2 b3 b4 b5 b6 b7 b8 0.9 0.7 c D D1 E E1 e e1 3.3 e2 4.4 L 1.1 0.9 L1 1.6 1.4 L2 0.6 0.4 L3 1.6 1.4 Z 2.6 2.4 2.9 5.275 4.2 2.7 5.075 4.0 1.2 0.625 0.8 1.0 0.425 0.6 0.55 14.05 13.6 11.3 10.85 2.6 0.45 13.45 13.3 10.7 10.55 OUTLINE VERSION SOT559A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 00-01-31 00-09-28 2000 Nov 15 9 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF amplifier module DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1) BGY280 This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to m