SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995 7 FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE PARTMARKING DETAILS BCP56 BCP53 BCP53 10 BCP53 16 C
BCP53
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -100 -80 -5 -100 -20 -10 -0.5 -1.0 40 25 63 100 250 100 160 125 160 250 MHz SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -100 -80 -5 -1.5 -1 2 -55 to +150 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
TYP. MAX. UNIT V V V nA CONDITIONS. IC=-100µ A IC=- 10mA * IE=-10µ A VCB=-30V VCB=-30V, Tamb=150°C VEB=-5V IC=-500mA, IB=-50mA* IC=-500mA, VCE=-2V* IC=-150mA, IC=-500mA, IC=-150mA, IC=-150mA, VCE=-2V* VCE=-2V* VCE=-2V* VCE=-2V*
µA µA
Emitter Cut-Off Current IEBO VCE(sat) VBE(on)
V V
Static Forward Current hFE Transfer Ratio BCP53-10 BCP53-16 Transition Frequency fT
IC=-50mA, VCE=-10V, f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 15
